scholarly journals Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots

2003 ◽  
Vol 68 (23) ◽  
Author(s):  
R. Santoprete ◽  
Belita Koiller ◽  
R. B. Capaz ◽  
P. Kratzer ◽  
Q. K. K. Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Tight Binding ◽  
Binding Study

scholarly journals Electronic properties of α − 𝒯3 quantum dots in magnetic fields

2020 ◽  
Vol 93 (9) ◽  
Author(s):  
Alexander Filusch ◽  
Holger Fehske
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Dot ◽  
Electronic Properties ◽  
Local Density ◽  
Tight Binding ◽  
Long Wavelength ◽  
Infinite Mass ◽  
Long Wavelength Approximation ◽  
Wavelength Approximation

Abstract We address the electronic properties of quantum dots in the two-dimensional α − 𝒯3 lattice when subjected to a perpendicular magnetic field. Implementing an infinite mass boundary condition, we first solve the eigenvalue problem for an isolated quantum dot in the low-energy, long-wavelength approximation where the system is described by an effective Dirac-like Hamiltonian that interpolates between the graphene (pseudospin 1/2) and Dice (pseudospin 1) limits. Results are compared to a full numerical (finite-mass) tight-binding lattice calculation. In a second step we analyse charge transport through a contacted α − 𝒯3 quantum dot in a magnetic field by calculating the local density of states and the conductance within the kernel polynomial and Landauer-Büttiker approaches. Thereby the influence of a disordered environment is discussed as well. Graphical abstract

scholarly journals Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

2007 ◽  
Vol 102 (2) ◽  
pp. 023711 ◽  
Author(s):  
R. Santoprete ◽  
P. Kratzer ◽  
M. Scheffler ◽  
Rodrigo B. Capaz ◽  
Belita Koiller
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Tight Binding ◽  
Binding Study
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