Breaking the current density threshold in spin-orbit-torque magnetic random access memory

Yin Zhang; H. Y. Yuan; X. S. Wang; X. R. Wang

doi:10.1103/physrevb.97.144416

Breaking the current density threshold in spin-orbit-torque magnetic random access memory

Physical Review B ◽

10.1103/physrevb.97.144416 ◽

2018 ◽

Vol 97 (14) ◽

Cited By ~ 8

Author(s):

Yin Zhang ◽

H. Y. Yuan ◽

X. S. Wang ◽

X. R. Wang

Keyword(s):

Current Density ◽

Random Access ◽

Random Access Memory ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Density Threshold

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Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications

Physical Review Applied ◽

10.1103/physrevapplied.15.064015 ◽

2021 ◽

Vol 15 (6) ◽

Author(s):

Y.C. Wu ◽

K. Garello ◽

W. Kim ◽

M. Gupta ◽

M. Perumkunnil ◽

...

Keyword(s):

Low Power ◽

Random Access ◽

Random Access Memory ◽

High Density ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Embedded Applications ◽

Voltage Gate

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Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory

Physical Review Applied ◽

10.1103/physrevapplied.15.024063 ◽

2021 ◽

Vol 15 (2) ◽

Author(s):

Rahul Mishra ◽

Taehwan Kim ◽

Jongsun Park ◽

Hyunsoo Yang

Keyword(s):

Random Access ◽

Random Access Memory ◽

High Density ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory

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Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320730 ◽

2019 ◽

Author(s):

Xiang Li ◽

Shy-Jay Lin ◽

DC Mahendra ◽

Yu-Ching Liao ◽

Chengyang Yao ◽

...

Keyword(s):

Low Power ◽

High Speed ◽

Random Access ◽

Random Access Memory ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory

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L-shape electrode design for high-density spin-orbit torque magnetic random access memory with perpendicular shape anisotropy

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/abf61d ◽

2021 ◽

Author(s):

Kequn Chi ◽

Yinuo Shi ◽

Zhou Li ◽

Wenbiao Zhang ◽

Yun Xing ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Shape Anisotropy ◽

High Density ◽

Electrode Design ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory

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Novel Radiation Hardening Read/Write Circuits Using Feedback Connections for Spin–Orbit Torque Magnetic Random Access Memory

IEEE Transactions on Circuits and Systems I Regular Papers ◽

10.1109/tcsi.2018.2881982 ◽

2019 ◽

Vol 66 (5) ◽

pp. 1853-1862 ◽

Cited By ~ 3

Author(s):

Bi Wang ◽

Zhaohao Wang ◽

Bi Wu ◽

Yumeng Bai ◽

Kaihua Cao ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Radiation Hardening ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Feedback Connections

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Area-Efficient Spin-Orbit Torque Magnetic Random-Access Memory

Integrated Circuits/Microchips ◽

10.5772/intechopen.92120 ◽

2020 ◽

Author(s):

Karim Ali

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Area Efficient

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Dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory

10.14711/thesis-991012660069403412 ◽

2018 ◽

Author(s):

Yin Zhang

Keyword(s):

Magnetic Susceptibility ◽

Random Access ◽

Random Access Memory ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Dynamic Magnetic Susceptibility

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Advanced Spin Orbit Torque Magnetic Random Access Memory with Field-Free Switching Schemes (Invited)

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict49897.2020.9278375 ◽

2020 ◽

Author(s):

Chao Wang ◽

Zhaohao Wang ◽

Shouzhong Peng ◽

Youguang Zhang ◽

Weisheng Zhao

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory

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An 8kb spin-orbit-torque magnetic random-access memory

2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ◽

10.1109/vlsi-tsa51926.2021.9440096 ◽

2021 ◽

Author(s):

Guan-Long Chen ◽

I-Jung Wang ◽

Po-Shao Yeh ◽

Sih-Han Li ◽

Shan-Yi Yang ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory

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Area-Efficient Multibit-per-Cell Architecture for Spin-Orbit-Torque Magnetic Random-Access Memory With Dedicated Diodes

IEEE Magnetics Letters ◽

10.1109/lmag.2018.2829111 ◽

2018 ◽

Vol 9 ◽

pp. 1-5 ◽

Cited By ~ 7

Author(s):

Karim Ali Ahmed ◽

Fei Li ◽

Sunny Yan Hwee Lua ◽

Chun-Huat Heng

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Cell Architecture ◽

Area Efficient

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