scholarly journals Prediction of a magnetic Weyl semimetal without spin-orbit coupling and strong anomalous Hall effect in the Heusler compensated ferrimagnet Ti2MnAl

2018 ◽  
Vol 97 (6) ◽  
Author(s):  
Wujun Shi ◽  
Lukas Muechler ◽  
Kaustuv Manna ◽  
Yang Zhang ◽  
Klaus Koepernik ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Weyl Semimetal

Measurement of the Intrinsic Anomalous Hall Effect in a 2D Hole System with Rashba Spin-orbit Coupling

2010 ◽  
Vol 57 (6(1)) ◽  
pp. 1933-1936 ◽  
Author(s):  
Hwayong Noh ◽  
S. Lee ◽  
S. H. Chun ◽  
Hyoung Chan Kim ◽  
L. N. Pfeiffer ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin

ANOMALOUS HALL EFFECT IN PARAMAGNETIC 2DEG WITH LINEAR AND CUBIC DRESSELHAUS SPIN–ORBIT COUPLING

2010 ◽  
Vol 24 (14) ◽  
pp. 2107-2112
Author(s):  
HUANGJUN ZHU
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Hall Conductivity ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Dimensional Electron ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Dimensional Electron Gas

We study the anomalous Hall effect in paramagnetic two-dimensional electron gas (2DEG) with both linear and cubic Dresselhaus spin–orbit coupling by means of Berry connection and Berry curvature. The effect of tuning the Fermi level and of tuning the cubic coupling coefficient on the anomalous Hall conductivity have been investigated semiclassically. Our results show that a sign reversal in the anomalous Hall conductivity may appear if the cubic Dresselhaus coefficient is very large and the Fermi surface is high enough, so the cubic Dresselhaus spin–orbit coupling term cannot be neglected in this case.

Anomalous Hall effect inMn1.5Ga/TaandMn1.5Ga/Ptbilayers: Modification from spin-orbit coupling of heavy metals

2016 ◽  
Vol 93 (6) ◽  
Author(s):  
K. K. Meng ◽  
J. Miao ◽  
X. G. Xu ◽  
J. X. Xiao ◽  
J. H. Zhao ◽  
...  
Keyword(s):  
Heavy Metals ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit

scholarly journals Reliability of spin-to-charge conversion measurements in graphene-based lateral spin valves

2D Materials ◽  
2021 ◽  
Author(s):  
C.K. Safeer ◽  
Franz Herling ◽  
Won Young Choi ◽  
Nerea Ontoso ◽  
Josep Ingla-Aynés ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Valve ◽  
Anomalous Hall Effect ◽  
Orbit Coupling ◽  
Pristine Graphene ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Spintronic Devices ◽  
Inverse Spin Hall Effect ◽  
Conversion Measurement

Abstract Understanding spin physics in graphene is crucial for developing future two- dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and ferromagnets, are best suited for such studies. Here, we report that signals mimicking the inverse Rashba-Edelstein effect can be measured in pristine graphene possessing negligible spin-orbit coupling, confirming that these signals are unrelated to spin-to-charge conversion. We identify either the anomalous Hall effect in the ferromagnet or the ordinary Hall effect in graphene induced by stray fields as the possible sources of this artefact. By quantitatively comparing these options with finite-element-method simulations, we conclude the latter better explains our results. Our study deepens the understanding of spin-to-charge conversion measurement schemes in graphene, which should be taken into account when designing future experiments.

Rashba spin–orbit coupling enhanced anomalous Hall effect in MnxSi1−x/SiO2/Si p–i–n junctions

RSC Advances ◽  
2016 ◽  
Vol 6 (61) ◽  
pp. 55930-55935 ◽  
Author(s):  
A. C. Yang ◽  
S. S. Yan ◽  
K. Zhang ◽  
H. H. Li ◽  
J. Pei ◽  
...  
Keyword(s):  
High Temperature ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
High Temperature Range ◽  
Temperature Range ◽  
Rashba Spin

The Mn0.48Si0.52/SiO2/Si p–i–n junction shows greatly enhanced negative anomalous Hall effect in the high temperature range due to the interfacial Rashba spin–orbit coupling.

scholarly journals Large intrinsic anomalous Hall effect in SrIrO3 induced by magnetic proximity effect

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Myoung-Woo Yoo ◽  
J. Tornos ◽  
A. Sander ◽  
Ling-Fang Lin ◽  
Narayan Mohanta ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Orbit Interaction ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Oxide Interfaces ◽  
Spin Orbit Interaction ◽  
Correlated Electron ◽  
Strong Spin

AbstractThe anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, by skew or side-jump scattering due to chiral features of the disorder scattering, or by an intrinsic contribution directly linked to the topological properties of the Bloch states. Here we show that the AHE can be artificially engineered in materials in which it is originally absent by combining the effects of symmetry breaking, spin orbit interaction and proximity-induced magnetism. In particular, we find a strikingly large AHE that emerges at the interface between a ferromagnetic manganite (La0.7Sr0.3MnO3) and a semimetallic iridate (SrIrO3). It is intrinsic and originates in the proximity-induced magnetism present in the narrow bands of strong spin-orbit coupling material SrIrO3, which yields values of anomalous Hall conductivity and Hall angle as high as those observed in bulk transition-metal ferromagnets. These results demonstrate the interplay between correlated electron physics and topological phenomena at interfaces between 3d ferromagnets and strong spin-orbit coupling 5d oxides and trace an exciting path towards future topological spintronics at oxide interfaces.

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