Rashba spin–orbit coupling enhanced anomalous Hall effect in MnxSi1−x/SiO2/Si p–i–n junctions
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The Mn0.48Si0.52/SiO2/Si p–i–n junction shows greatly enhanced negative anomalous Hall effect in the high temperature range due to the interfacial Rashba spin–orbit coupling.
2010 ◽
Vol 57
(6(1))
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pp. 1933-1936
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2017 ◽
Vol 440
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pp. 63-65
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2012 ◽
Vol 324
(21)
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pp. 3573-3575
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