scholarly journals Temperature-dependent Gilbert damping of Co2FeAl thin films with different degree of atomic order

2017 ◽  
Vol 96 (22) ◽  
Author(s):  
Ankit Kumar ◽  
Fan Pan ◽  
Sajid Husain ◽  
Serkan Akansel ◽  
Rimantas Brucas ◽  
...  
2020 ◽  
Vol 29 (12) ◽  
pp. 126701
Author(s):  
Gesang Dunzhu ◽  
Yi-Bing Zhao ◽  
Ying Jin ◽  
Cai Zhou ◽  
Chang-Jun Jiang

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Yuelei Zhao ◽  
Qi Song ◽  
See-Hun Yang ◽  
Tang Su ◽  
Wei Yuan ◽  
...  

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.


1998 ◽  
Vol 546 ◽  
Author(s):  
V. Ziebartl ◽  
O. Paul ◽  
H. Baltes

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.


2016 ◽  
Vol 53 ◽  
pp. 89-97 ◽  
Author(s):  
Chandraprakash Chindam ◽  
Nicole R. Brown ◽  
Akhlesh Lakhtakia ◽  
Osama O. Awadelkarim ◽  
Wasim Orfali

2010 ◽  
Vol 506 (2) ◽  
pp. 794-799 ◽  
Author(s):  
A.V. Moholkar ◽  
G.L. Agawane ◽  
Kyu-Ung Sim ◽  
Ye-bin Kwon ◽  
Doo Sun Choi ◽  
...  

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