Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides

2017 ◽  
Vol 96 (20) ◽  
Author(s):  
Le Huang ◽  
Lin Tao ◽  
Kai Gong ◽  
Yongtao Li ◽  
Huafeng Dong ◽  
...  
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Transition Metal Dichalcogenides ◽  
Fermi Level Pinning ◽  
Metal Dichalcogenides

scholarly journals Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides

2019 ◽  
Vol 123 (9) ◽  
pp. 5411-5420 ◽  
Author(s):  
Kai Sotthewes ◽  
Rik van Bremen ◽  
Edwin Dollekamp ◽  
Tim Boulogne ◽  
Krystian Nowakowski ◽  
...  
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Transition Metal Dichalcogenides ◽  
Fermi Level Pinning ◽  
Metal Dichalcogenides

scholarly journals High-specific-power flexible transition metal dichalcogenide solar cells

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Koosha Nassiri Nazif ◽  
Alwin Daus ◽  
Jiho Hong ◽  
Nayeun Lee ◽  
Sam Vaziri ◽  
...  
Keyword(s):  
Solar Cells ◽  
Transition Metal ◽  
Fermi Level ◽  
Transition Metal Dichalcogenides ◽  
Specific Power ◽  
Transition Metal Dichalcogenide ◽  
Fermi Level Pinning ◽  
High Specific Power ◽  
Metal Dichalcogenides ◽  
Transfer Method

AbstractSemiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact–TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: (1) transparent graphene contacts to mitigate Fermi-level pinning, (2) MoOx capping for doping, passivation and anti-reflection, and (3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of 4.4 W g−1 for flexible TMD (WSe2) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to 46 W g−1, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.

The role of electron-phonon interactions on the coherence lifetime of monolayer transition metal dichalcogenides

2017 ◽  
Vol 266 ◽  
pp. 30-33
Author(s):  
C.E. Stevens ◽  
P. Dey ◽  
J. Paul ◽  
Z. Wang ◽  
H. Zhang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

scholarly journals Nanoscale Friction Behavior of Transition-Metal Dichalcogenides: Role of the Chalcogenide

ACS Nano ◽  
2020 ◽  
Vol 14 (11) ◽  
pp. 16013-16021 ◽  
Author(s):  
Mohammad R. Vazirisereshk ◽  
Kathryn Hasz ◽  
Meng-Qiang Zhao ◽  
A. T. Charlie Johnson ◽  
Robert W. Carpick ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Friction Behavior ◽  
Nanoscale Friction ◽  
Metal Dichalcogenides

Role of graphene and transition metal dichalcogenides as hole transport layer and counter electrode in solar cells

2019 ◽  
Vol 44 (3) ◽  
pp. 1464-1487 ◽  
Author(s):  
Muhammad Zahir Iqbal ◽  
Jameel‐Un Nabi ◽  
Saman Siddique ◽  
Hafiz Taimoor Ahmed Awan ◽  
Syed Shabhi Haider ◽  
...  
Keyword(s):  
Solar Cells ◽  
Transition Metal ◽  
Counter Electrode ◽  
Transition Metal Dichalcogenides ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Metal Dichalcogenides
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