scholarly journals Spin-polarized quasiparticle control in a double spin-filter tunnel junction

2017 ◽  
Vol 96 (2) ◽  
Author(s):  
P. K. Muduli
Keyword(s):  
Tunnel Junction ◽  
Spin Filter ◽  
Double Spin ◽  
Spin Polarized

Spin switch based on double spin-filter tunnel junction geometry

2010 ◽  
Vol 108 (8) ◽  
pp. 083910 ◽  
Author(s):  
G. X. Miao ◽  
J. S. Moodera
Keyword(s):  
Tunnel Junction ◽  
Spin Filter ◽  
Double Spin ◽  
Junction Geometry ◽  
Spin Switch

Magnetoresistive double spin filter tunnel junction

2000 ◽  
Vol 88 (9) ◽  
pp. 5277-5279 ◽  
Author(s):  
D. C. Worledge ◽  
T. H. Geballe
Keyword(s):  
Tunnel Junction ◽  
Spin Filter ◽  
Double Spin

Four-state non-volatile memory in a multiferroic spin filter tunnel junction

2016 ◽  
Vol 109 (25) ◽  
pp. 252903 ◽  
Author(s):  
Jieji Ruan ◽  
Chen Li ◽  
Zhoushen Yuan ◽  
Peng Wang ◽  
Aidong Li ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Spin Filter ◽  
Non Volatile Memory ◽  
Volatile Memory

scholarly journals Magnetization Dynamics in a Perpendicular Anisotropy Free Layer under a Spin Torque Effect with Crossed Polarization

2020 ◽  
Vol 25 (1) ◽  
pp. 54
Author(s):  
Nafeesa Rahman ◽  
Rachid Sbiaa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Film Plane ◽  
Spin Torque ◽  
Spin Angular Momentum ◽  
Perpendicular Anisotropy ◽  
Free Layer ◽  
Magnetization Dynamics ◽  
Magnetization Direction ◽  
Spin Polarized

The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy, this in turn will lead to low power consumption. In this work, we propose a design where a spin torque oscillator (STO) is integrated with a conventional magnetic tunnel junction (MTJ) which will assist in the ultrafast reversal of the magnetization of the free layer of the MTJ. The structure formed (MTJ stacked with STO), will have the free layer of the MTJ sandwiched between two spin polarizer layers, one with a fixed magnetization direction perpendicular to film plane (main static polarizer) and the other with an oscillatory magnetization (dynamic polarizer). The static polarizer is the fixed layer of the MTJ itself and the dynamic polarizer is the free layer of the STO.

scholarly journals Bolometric Properties of a Spin-Torque Diode Based on a Magnetic Tunnel Junction

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
G. D. Demin ◽  
K. A. Zvezdin ◽  
A. F. Popkov
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Nonuniform Heating ◽  
Spin Torque ◽  
Rectification Effect ◽  
Wide Range ◽  
Spin Polarized ◽  
Potential Applications ◽  
Dynamic Components ◽  
Bolometric Effect

Spin caloritronics opens up a wide range of potential applications, one of which can be the thermoelectric rectification of a microwave signal by spin-diode structures. The bolometric properties of a spin-torque diode based on a magnetic tunnel junction (MTJ) in the presence of a thermal gradient through a tunnel junction are discussed. Theoretical estimates of the static and dynamic components of the microwave sensitivity of the spin-torque diode, related to thermoelectric tunnel magneto-Seebeck effect and the thermal transfer of spin angular momentum in the MTJ under nonuniform heating, are presented. Despite the fact that the thermal contribution to the microwave sensitivity of the spin-torque diode is found to be relatively small in relation to the rectification effect related to the modulation of the MTJ resistance by a microwave spin-polarized current, nevertheless, the considered bolometric effect can be successfully utilized in some real-world microwave applications.

Spin-polarized Tunneling Spectroscopy of YBCO/LSMO Tunnel Junction

2006 ◽  
Author(s):  
Hiromi Kashiwaya ◽  
Kaori Ikeda ◽  
Bambang Prijamboedi ◽  
Satoshi Kashiwaya ◽  
Akira Sugimoto ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Tunneling Spectroscopy ◽  
Spin Polarized ◽  
Spin Polarized Tunneling

Perfect spin-filter devices based on zigzag zinc oxide nanoribbons

2016 ◽  
Vol 30 (32n33) ◽  
pp. 1650392 ◽  
Author(s):  
Zi-Yue Zhang
Keyword(s):  
Zinc Oxide ◽  
Electron Transport ◽  
Spin Polarization ◽  
Bias Voltage ◽  
First Principles ◽  
External Fields ◽  
Spin Filter ◽  
Spin Polarized ◽  
Spin Filters ◽  
Filtering Effect

Spin-polarized electron transport through a zigzag zinc oxide nanoribbon (ZnONR) has been studied using first-principles transport simulations. Ribbons without edges passivated show 100% spin polarization at small bias voltage independently of width. The ribbons with edge zinc atoms passivated maintain absolute spin-filtering effect in much larger bias region. The results demonstrate that zigzag ZnONRs act as perfect spin-filters in the absence of magnetic electrodes and external fields.

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