scholarly journals In-plane commensurate GaN/AlN junctions: Single-layer composite structures, single and multiple quantum wells and quantum dots

2017 ◽  
Vol 95 (15) ◽  
Author(s):  
A. Onen ◽  
D. Kecik ◽  
E. Durgun ◽  
S. Ciraci
1996 ◽  
Vol 11 (12) ◽  
pp. 1863-1872 ◽  
Author(s):  
P J Klar ◽  
D Wolverson ◽  
D E Ashenford ◽  
B Lunn ◽  
Torsten Henning

2006 ◽  
Vol 17 (17) ◽  
pp. 4300-4306 ◽  
Author(s):  
Yen-Lin Lai ◽  
Chuan-Pu Liu ◽  
Tao-Hung Hsueh ◽  
Yung-Hsiang Lin ◽  
Hung-Chin Chung ◽  
...  

2001 ◽  
Vol 225 (2-4) ◽  
pp. 550-555 ◽  
Author(s):  
Chin-An Chang ◽  
Cheng-Zu Wu ◽  
Pai-Yong Wang ◽  
Xing-Jian Guo ◽  
Yi-Tsuo Wu ◽  
...  

2006 ◽  
Vol 955 ◽  
Author(s):  
Tao Xu ◽  
Alexey Yu Nikiforov ◽  
Ryan France ◽  
Christos Thomidis ◽  
Adrian Williams ◽  
...  

ABSTRACTIn this paper, we report the development of blue-green-red LEDs based on InGaN quantum dots (QDs) and quantum wells in the active region, and GaN QDs in the nucleation layer for dislocation filtering, by plasma assisted molecular beam epitaxy. Self-assembled InGaN QDs and GaN QDs were grown in the Stranski-Krastanov mode. For the GaN QDs grown at 770 °C, the height distribution of the dots shows a bimodal distribution, which can be attributed to the interaction of the GaN QDs with the threading dislocations. TEM and XRD studies indicate that GaN QDs in the nucleation region help threading dislocations to deviate and annihilate. The average dot height, diameter and density of the InGaN QDs were estimated to be 3 nm, 30 nm and 7×1010 cm−2, respectively. The cathodoluminescence emission peak of the InGaN/GaN multiple layer quantum dots (MQDs) was found to red shift 330 meV with respect to the emission peak of the uncapped single layer of InGaN QDs due to Quantum Confined Stark effect. Blue LEDs based on InGaN/GaN multiple quantum wells (MQWs) as well as green and red LEDs based on InGaN MQDs emitting at 440 nm, 560 nm and 640 nm with FWHM of 30 nm, 87 nm and 97 nm, respectively, were grown and fabricated. The electroluminescence peak positions of both the green and red InGaN MQD LEDs are shown to be more blue-shifted with increasing injection current than that of the blue InGaN/GaN MQW LEDs.


1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  

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