scholarly journals GdRh2Si2: An exemplary tetragonal system for antiferromagnetic order with weak in-plane anisotropy

2017 ◽  
Vol 95 (13) ◽  
Author(s):  
K. Kliemt ◽  
M. Hofmann-Kliemt ◽  
K. Kummer ◽  
F. Yakhou-Harris ◽  
C. Krellner ◽  
...  
Keyword(s):  
Antiferromagnetic Order ◽  
Tetragonal System ◽  
Plane Anisotropy

Electronic polarizabilities of ions in uniaxial crystals. II. Tetragonal system

1973 ◽  
Vol 34 (8-9) ◽  
pp. 733-739 ◽  
Author(s):  
E. Uzan ◽  
V. Chandrasekharan
Keyword(s):  
Tetragonal System

scholarly journals Canted antiferromagnetic order and spin dynamics in the honeycomb-lattice compound Tb2Ir3Ga9

2021 ◽  
Vol 103 (18) ◽  
Author(s):  
Feng Ye ◽  
Zachary Morgan ◽  
Wei Tian ◽  
Songxue Chi ◽  
Xiaoping Wang ◽  
...  
Keyword(s):  
Spin Dynamics ◽  
Antiferromagnetic Order ◽  
Honeycomb Lattice

scholarly journals Magnetic crystalline-symmetry-protected axion electrodynamics and field-tunable unpinned Dirac cones in EuIn2As2

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
S. X. M. Riberolles ◽  
T. V. Trevisan ◽  
B. Kuthanazhi ◽  
T. W. Heitmann ◽  
F. Ye ◽  
...  
Keyword(s):  
Density Functional ◽  
Surface States ◽  
Antiferromagnetic Order ◽  
Functional Theory ◽  
Magnetic Symmetry ◽  
Integer Quantum ◽  
Symmetry Protected ◽  
Topological Crystalline Insulator ◽  
Low Symmetry ◽  
Crystalline Symmetry

AbstractKnowledge of magnetic symmetry is vital for exploiting nontrivial surface states of magnetic topological materials. EuIn2As2 is an excellent example, as it is predicted to have collinear antiferromagnetic order where the magnetic moment direction determines either a topological-crystalline-insulator phase supporting axion electrodynamics or a higher-order-topological-insulator phase with chiral hinge states. Here, we use neutron diffraction, symmetry analysis, and density functional theory results to demonstrate that EuIn2As2 actually exhibits low-symmetry helical antiferromagnetic order which makes it a stoichiometric magnetic topological-crystalline axion insulator protected by the combination of a 180∘ rotation and time-reversal symmetries: $${C}_{2}\times {\mathcal{T}}={2}^{\prime}$$ C 2 × T = 2 ′ . Surfaces protected by $${2}^{\prime}$$ 2 ′ are expected to have an exotic gapless Dirac cone which is unpinned to specific crystal momenta. All other surfaces have gapped Dirac cones and exhibit half-integer quantum anomalous Hall conductivity. We predict that the direction of a modest applied magnetic field of μ0H ≈ 1 to 2 T can tune between gapless and gapped surface states.

High-field soft-x-ray dichroism of a hard ferrimagnet with easy-plane anisotropy

2021 ◽  
Vol 104 (6) ◽  
Author(s):  
Sh. Yamamoto ◽  
D. I. Gorbunov ◽  
I. F. Diaz-Ortega ◽  
A. Miyata ◽  
T. Kihara ◽  
...  
Keyword(s):  
High Field ◽  
Easy Plane ◽  
X Ray ◽  
Plane Anisotropy

Doping-Mediated Lattice Engineering of Monolayer ReS2 for Modulating In-Plane Anisotropy of Optical and Transport Properties

ACS Nano ◽  
2021 ◽  
Author(s):  
Ganesh Ghimire ◽  
Krishna P. Dhakal ◽  
Wooseon Choi ◽  
Yonas Assefa Esthete ◽  
Seon Je Kim ◽  
...  
Keyword(s):  
Transport Properties ◽  
Plane Anisotropy

Materials, Devices and Spin Transfer Torque in Antiferromagnetic Spintronics: A Concise Review

SPIN ◽  
2017 ◽  
Vol 07 (03) ◽  
pp. 1740014 ◽  
Author(s):  
Cormac Ó Coileáin ◽  
Han Chun Wu
Keyword(s):  
Magnetic Fields ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Tetragonal Structure ◽  
Next Generation ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Concise Review ◽  
Plane Anisotropy ◽  
Magnetic States

From historical obscurity, antiferromagnets are recently enjoying revived interest, as antiferromagnetic (AFM) materials may allow the continued reduction in size of spintronic devices. They have the benefit of being insensitive to parasitic external magnetic fields, while displaying high read/write speeds, and thus poised to become an integral part of the next generation of logical devices and memory. They are currently employed to preserve the magnetoresistive qualities of some ferromagnetic based giant or tunnel magnetoresistance systems. However, the question remains how the magnetic states of an antiferromagnet can be efficiently manipulated and detected. Here, we reflect on AFM materials for their use in spintronics, in particular, newly recognized antiferromagnet Mn2Au with its in-plane anisotropy and tetragonal structure and high Néel temperature. These attributes make it one of the most promising candidates for AFM spintronics thus far with the possibility of architectures freed from the need for ferromagnetic (FM) elements. Here, we discuss its potential for use in ferromagnet-free spintronic devices.

Pinning-assisted out-of-plane anisotropy in reverse stack FeCo/FePt intermetallic bilayers for controlled switching in spintronics

2021 ◽  
pp. 160249
Author(s):  
Garima Vashisht ◽  
Utkarsh Shashank ◽  
Surbhi Gupta ◽  
Rohit Medwal ◽  
C.L. Dong ◽  
...  
Keyword(s):  
Controlled Switching ◽  
Plane Anisotropy ◽  
Out Of Plane
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