Doping-Mediated Lattice Engineering of Monolayer ReS2 for Modulating In-Plane Anisotropy of Optical and Transport Properties

ACS Nano ◽  
2021 ◽  
Author(s):  
Ganesh Ghimire ◽  
Krishna P. Dhakal ◽  
Wooseon Choi ◽  
Yonas Assefa Esthete ◽  
Seon Je Kim ◽  
...  
2013 ◽  
Vol 1517 ◽  
Author(s):  
Petar Popčević ◽  
Ante Bilušić ◽  
Kristijan Velebit ◽  
Ana Smontara

ABSTRACTTransport properties (thermal conductivity, electrical resistivity and thermopower) of decagonal quasicrystal d-AlCoNi, and approximant phases Y-AlCoNi, o-Al13Co4, m-Al13Fe4, m-Al13(Fe,Ni)4 and T-AlMnFe have been reviewed. Among all presented alloys the stacking direction (periodic for decagonal quasicrystals) is the most conductive one for the charge and heat transport, and the in/out-of-plane anisotropy is much larger than the in-plane anisotropy. There is a strong relationship between periodicity length along stacking direction and anisotropy of transport properties in both quasicrystals and their approximants suggesting a decrease of the anisotropy with increasing number of stacking layers.


1996 ◽  
Vol 77 (18) ◽  
pp. 3913-3916 ◽  
Author(s):  
C. Villard ◽  
G. Koren ◽  
D. Cohen ◽  
E. Polturak ◽  
B. Thrane ◽  
...  

2006 ◽  
Vol 74 (13) ◽  
Author(s):  
P. Orgiani ◽  
A. Yu. Petrov ◽  
C. Adamo ◽  
C. Aruta ◽  
C. Barone ◽  
...  

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.


Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.


1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev

1989 ◽  
Vol 50 (21) ◽  
pp. 3233-3242 ◽  
Author(s):  
M. Očko ◽  
E. Babić

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