scholarly journals Temperature-dependent band structure ofSrTiO3interfaces

2017 ◽  
Vol 95 (5) ◽  
Author(s):  
Amany Raslan ◽  
Patrick Lafleur ◽  
W. A. Atkinson
Keyword(s):  
Band Structure ◽  
Temperature Dependent

Electronic Properties of Bismuth Nanowires

2001 ◽  
Vol 679 ◽  
Author(s):  
Stephen B. Cronin ◽  
Yu-Ming Lin ◽  
Oded Rabin ◽  
Marcie R. Black ◽  
Gene Dresselhaus ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Bismuth Nanowires ◽  
Bi Nanowire ◽  
Anodic Alumina Templates

ABSTRACTThe pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.

Temperature dependent electronic band structure of wurtzite GaAs nanowires

Nanoscale ◽  
2018 ◽  
Vol 10 (3) ◽  
pp. 1481-1486 ◽  
Author(s):  
Neimantas Vainorius ◽  
Simon Kubitza ◽  
Sebastian Lehmann ◽  
Lars Samuelson ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Band Structure ◽  
Temperature Dependence ◽  
Electronic Band Structure ◽  
Temperature Dependent ◽  
Electronic Band ◽  
Gaas Nanowires

Temperature dependence of the indicated transitions in wurtzite GaAs.

Temperature-dependent band structure ofHg1−xZnxTe-CdTe superlattices

1991 ◽  
Vol 44 (24) ◽  
pp. 13541-13548 ◽  
Author(s):  
J. Manassès ◽  
Y. Guldner ◽  
J. P. Vieren ◽  
M. Voos ◽  
J. P. Faurie
Keyword(s):  
Band Structure ◽  
Temperature Dependent

Temperature-dependent quasiparticle conduction band structure of the EuS monolayer

2000 ◽  
Vol 12 (48) ◽  
pp. 9857-9868 ◽  
Author(s):  
S Mathi Jaya ◽  
M C Valsakumar ◽  
W Nolting
Keyword(s):  
Band Structure ◽  
Conduction Band ◽  
Temperature Dependent

scholarly journals Temperature dependent Band gap Correction model using tight-binding approach for UTB device simulations

2022 ◽  
Author(s):  
Nalin Vilochan Mishra ◽  
Ravi Solanki ◽  
Harshit Kansal ◽  
Aditya S Medury
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Tight Binding ◽  
Thin Body ◽  
Temperature Dependent ◽  
Minor Variation ◽  
Correction Model ◽  
Wide Range ◽  
Channel Thickness ◽  
Semi Empirical

<div>Ultra-thin body (UTB) devices are being used in many electronic applications operating over a wide range of temperatures. The electrostatics of these devices depends on the band structure of the channel material, which varies with temperature as well as channel thickness. The semi-empirical tight binding (TB) approach is widely used for calculating channel thickness dependent band structure of any material, at a particular temperature, where TB parameters are defined. For elementary semiconductors like Si, Ge and compound semiconductors like GaAs, these TB parameters are generally defined at only 0 K and 300 K. This limits the ability of the TB approach to simulate the electrostatics of these devices at any other intermediate temperatures.</div><div>In this work, we analyze the variation of band structure for Si, Ge and GaAs over different channel thicknesses at 0 K and 300 K (for which TB parameters are available), and show that the band curvature at the band minima has minor variation with temperature, whereas the change of band gap significantly affects the channel electrostatics. Based on this finding, we propose an approach to simulate the electrostatics of UTB devices, at any temperature between 0 K and 300 K, using TB parameters defined at 0 K, along with a suitable channel thickness and temperature dependent band gap correction. </div>

Rectifying characteristics and tunable magnetoresistance in heterojunctions of La0.9Hf0.1MnO3/0.05 wt.% Nb-doped SrTiO3

2017 ◽  
Vol 31 (25) ◽  
pp. 1745022 ◽  
Author(s):  
Yaping Qi ◽  
Xiangbo Liu ◽  
Hao Ni ◽  
Ming Zheng ◽  
Liping Chen ◽  
...  
Keyword(s):  
Band Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ferromagnetic Transition ◽  
Grown Film ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Current Voltage ◽  
Current Voltage Characteristics

La[Formula: see text]Hf[Formula: see text]MnO3 films were grown on 0.05 wt.% Nb-doped SrTiO3 substrates by pulsed laser deposition. X-ray diffraction measurements demonstrated that our samples were of good epitaxy and single-crystal. The temperature-dependent resistance has been investigated. It was observed that the as-grown film of La[Formula: see text]Hf[Formula: see text]MnO3 exhibited a typical paramagnetic-ferromagnetic transition. Heterojunctions of La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 exhibited-asymmetric current–voltage characteristics and a remarkable temperature-dependent rectifying behavior in a wide temperature range (from 40 K to 300 K). And the most remarkable observation of this work is the existence of a crossover from positive to negative magnetoresistance in the La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction as the temperature decreases. A temperature-dependent magnetoresistance was studied as well. The rectifying characteristics and tunable magnetoresistance of these heterojunctions may be attributed to band structure of La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction.

scholarly journals THERMOPOWER OF SnTe FROM BOLTZMANN TRANSPORT CALCULATIONS

2010 ◽  
Vol 03 (04) ◽  
pp. 223-226 ◽  
Author(s):  
DAVID J. SINGH
Keyword(s):  
Band Structure ◽  
First Principles ◽  
Transport Theory ◽  
Boltzmann Transport ◽  
Temperature Dependent ◽  
Boltzmann Transport Theory ◽  
P Type

The doping and temperature dependent thermopower of SnTe is calculated from the first principles band structure using Boltzmann transport theory. We find that the p-type thermopower is inferior to PbTe consistent with experimental observations, but that the n-type thermopower is substantially more favorable.

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