Temperature-dependent conduction band structure of GaNAs and GaInNAs / GaAs quantum wells

2005 ◽  
Author(s):  
M. Hetterich
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Conduction Band ◽  
Temperature Dependent

Temperature-dependent quasiparticle conduction band structure of the EuS monolayer

2000 ◽  
Vol 12 (48) ◽  
pp. 9857-9868 ◽  
Author(s):  
S Mathi Jaya ◽  
M C Valsakumar ◽  
W Nolting
Keyword(s):  
Band Structure ◽  
Conduction Band ◽  
Temperature Dependent

(Invited) Conduction Band Structure of Colloidal Quantum Wells

2021 ◽  
Vol MA2021-01 (23) ◽  
pp. 903-903
Author(s):  
Benjamin T. Diroll
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Conduction Band

Band structure and optical gain in InGaAsN∕GaAs and InGaAsN∕GaAsN quantum wells

2003 ◽  
Vol 150 (1) ◽  
pp. 25 ◽  
Author(s):  
X. Marie ◽  
J. Barrau ◽  
T. Amand ◽  
H. Carrère ◽  
A. Arnoult ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain

Conduction Band Structure of Tellurium

1973 ◽  
Vol 35 (2) ◽  
pp. 525-533 ◽  
Author(s):  
Hitoshi Shinno ◽  
Ryozo Yoshizaki ◽  
Shoji Tanaka ◽  
Takao Doi ◽  
Hiroshi Kamimura
Keyword(s):  
Band Structure ◽  
Conduction Band

Electronic Properties of Bismuth Nanowires

2001 ◽  
Vol 679 ◽  
Author(s):  
Stephen B. Cronin ◽  
Yu-Ming Lin ◽  
Oded Rabin ◽  
Marcie R. Black ◽  
Gene Dresselhaus ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Bismuth Nanowires ◽  
Bi Nanowire ◽  
Anodic Alumina Templates

ABSTRACTThe pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.

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