scholarly journals Anomalous Hall effect and spin-orbit torques in MnGa/IrMn films: Modification from strong spin Hall effect of the antiferromagnet

2016 ◽  
Vol 94 (21) ◽  
Author(s):  
K. K. Meng ◽  
J. Miao ◽  
X. G. Xu ◽  
Y. Wu ◽  
X. P. Zhao ◽  
...  
2021 ◽  
Vol 7 (2) ◽  
pp. eabd9697
Author(s):  
Takuya Kawada ◽  
Masashi Kawaguchi ◽  
Takumi Funato ◽  
Hiroshi Kohno ◽  
Masamitsu Hayashi

We report on the observation of the acoustic spin Hall effect that facilitates lattice motion–induced spin current via spin-orbit interaction (SOI). Under excitation of surface acoustic wave (SAW), we find that a spin current flows orthogonal to the SAW propagation in nonmagnetic metals (NMs). The acoustic spin Hall effect manifests itself in a field-dependent acoustic voltage in NM/ferromagnetic metal bilayers. The acoustic voltage takes a maximum when the NM layer thickness is close to its spin diffusion length, vanishes for NM layers with weak SOI, and increases linearly with the SAW frequency. To account for these results, we find that the spin current must scale with the SOI and the time derivative of the lattice displacement. These results, which imply the strong coupling of electron spins with rotating lattices via the SOI, show the potential of lattice dynamics to supply spin current in strong spin-orbit metals.


2009 ◽  
Vol 23 (12n13) ◽  
pp. 2551-2555 ◽  
Author(s):  
HARTMUT BUHMANN

Due to a strong spin orbit interaction HgTe quantum well structures exhibit an unusual subband structure ordering which leads to some remarkable transport properties depending on the actual carrier density. Especially for quantum wells with an inverted band structure ordering, a strong Rashba-type spin orbit splitting gives rise to a strong spin Hall effect in the metallic regime and in the bulk insulating regime spin polarized edge channel transport leads to the formation of the quantum spin Hall effect. Gated quantum well structures have been used to explore these, the metallic and insulating, transport regimes experimentally.


2017 ◽  
Vol 255-256 ◽  
pp. 15-19 ◽  
Author(s):  
K.K. Meng ◽  
J. Miao ◽  
X.G. Xu ◽  
Y. Wu ◽  
J.H. Zhao ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Myoung-Woo Yoo ◽  
J. Tornos ◽  
A. Sander ◽  
Ling-Fang Lin ◽  
Narayan Mohanta ◽  
...  

AbstractThe anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, by skew or side-jump scattering due to chiral features of the disorder scattering, or by an intrinsic contribution directly linked to the topological properties of the Bloch states. Here we show that the AHE can be artificially engineered in materials in which it is originally absent by combining the effects of symmetry breaking, spin orbit interaction and proximity-induced magnetism. In particular, we find a strikingly large AHE that emerges at the interface between a ferromagnetic manganite (La0.7Sr0.3MnO3) and a semimetallic iridate (SrIrO3). It is intrinsic and originates in the proximity-induced magnetism present in the narrow bands of strong spin-orbit coupling material SrIrO3, which yields values of anomalous Hall conductivity and Hall angle as high as those observed in bulk transition-metal ferromagnets. These results demonstrate the interplay between correlated electron physics and topological phenomena at interfaces between 3d ferromagnets and strong spin-orbit coupling 5d oxides and trace an exciting path towards future topological spintronics at oxide interfaces.


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