scholarly journals Disorder-induced domain wall velocity shift at high fields in perpendicularly magnetized thin films

2016 ◽  
Vol 94 (17) ◽  
Author(s):  
Michele Voto ◽  
Luis Lopez-Diaz ◽  
Luis Torres ◽  
Simone Moretti
2002 ◽  
Vol 748 ◽  
Author(s):  
H. Fujisawa ◽  
T. Yagi ◽  
M. Shimizu ◽  
H. Niu

ABSTRACTDomain wall velocity and nucleation rate in 250nm-thick epitaxial Pb(Zr,Ti)O3 thin films were studied by piezoresponse scanning force microscopy (PFM). Domain growth observed after applying switching pulses shorter than the switching time can be described using the Ishibashi theory. At a pulse voltage of +5V, experimental results indicated that new nucleation occurred during the switching period, which corresponded to the Category I in the Ishibashi theory. Switching time, domain wall velocity and nucleation rate at +5V can be obtained as 70ns, 8.3m/s and 43μs-1 μm-2, respectively. As compared with experimental results reported in BaTiO3 single crystals, domain wall velocity was much smaller but nucleation rate was much larger than those in single crystals.


2015 ◽  
Vol 107 (25) ◽  
pp. 252902
Author(s):  
Z. Huang ◽  
I. Stolichnov ◽  
A. Bernand-Mantel ◽  
Marine Schott ◽  
S. Auffret ◽  
...  

2008 ◽  
Vol 77 (1) ◽  
Author(s):  
Jusang Yang ◽  
Corneliu Nistor ◽  
G. S. D. Beach ◽  
J. L. Erskine

2007 ◽  
Vol 310 (2) ◽  
pp. 2032-2034 ◽  
Author(s):  
W.J. Kim ◽  
S.M. Seo ◽  
T.D. Lee ◽  
K.J. Lee

1964 ◽  
Vol 35 (10) ◽  
pp. 2895-2899 ◽  
Author(s):  
H. L. Stadler ◽  
P. J. Zachmanidis

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