scholarly journals Influence of the impurity scattering on charge transport in unconventional superconductor junctions

2016 ◽  
Vol 94 (1) ◽  
Author(s):  
Bo Lu ◽  
Pablo Burset ◽  
Yasunari Tanuma ◽  
Alexander A. Golubov ◽  
Yasuhiro Asano ◽  
...  
Keyword(s):  
Charge Transport ◽  
Impurity Scattering ◽  
Unconventional Superconductor

scholarly journals Intrinsic and Extrinsic Charge Transport in CH3NH3PbI3 Perovskites Predicted from First-Principles

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Tianqi Zhao ◽  
Wen Shi ◽  
Jinyang Xi ◽  
Dong Wang ◽  
Zhigang Shuai
Keyword(s):  
Charge Transport ◽  
Electron Mobility ◽  
First Principles ◽  
Phonon Scattering ◽  
Single Layer ◽  
Impurity Scattering ◽  
Hole Mobility ◽  
Single Layer Graphene ◽  
Device Structures ◽  
Charged Impurity Scattering

Abstract Both intrinsic and extrinsic charge transport properties of methylammonium lead triiodide perovskites are investigated from first-principles. The weak electron-phonon couplings are revealed, with the largest deformation potential (~ 5 eV) comparable to that of single layer graphene. The intrinsic mobility limited by the acoustic phonon scattering is as high as a few thousands cm2 V−1 s−1 with the hole mobility larger than the electron mobility. At the impurity density of 1018 cm−3, the charged impurity scattering starts to dominate and lowers the electron mobility to 101 cm2 V−1 s−1 and the hole mobility to 72.2 cm2 V−1 s−1. The high intrinsic mobility warrants the long and balanced diffusion length of charge carriers. With the control of impurities or defects as well as charge traps in these perovskites, enhanced efficiencies of solar cells with simplified device structures are promised.

Charge Transport in Dilute Aluminum Alloys

1975 ◽  
Vol 53 (18) ◽  
pp. 1693-1704 ◽  
Author(s):  
F. W. Kus ◽  
J. P. Carbotte
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Aluminum Alloys ◽  
Charge Transport ◽  
Impurity Scattering ◽  
Major Effect ◽  
Pure Metal ◽  
Matthiessen's Rule ◽  
Matthiessen’S Rule ◽  
The Ideal

We have calculated the electrical resistivity of several dilute aluminum based alloys for which experimental data exist on the deviation from Matthiessen's rule(DMR). We take account of the anisotropy in the ideal (pure metal) scattering and its modification on adding impurities. This is a major source of DMR. In addition, we compute the effect of inelastic impurity scattering, interference between impurity and ideal scattering, Debye–Waller factors, and also the effect of mass changes on the alloy resistivity. While some of these mechanisms for DMR can be of importance under specific conditions, they should be included only after the major effect of anisotropy in the ideal scattering has been properly treated.

Impurity scattering effect on charge transport in high-Tc cuprate junctions

2004 ◽  
Vol 30 (7) ◽  
pp. 579-590
Author(s):  
Y. Tanaka ◽  
Y. Asano ◽  
S. Kashiwaya
Keyword(s):  
Charge Transport ◽  
Impurity Scattering ◽  
High Tc ◽  
Scattering Effect

scholarly journals A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation

2014 ◽  
Vol 25 (2) ◽  
pp. 255-276 ◽  
Author(s):  
GIUSEPPE ALÌ ◽  
GIOVANNI MASCALI ◽  
VITTORIO ROMANO ◽  
ROSA CLAUDIA TORCASIO
Keyword(s):  
Dispersion Relation ◽  
Charge Transport ◽  
Optical Phonon ◽  
Impurity Scattering ◽  
Compound Semiconductors ◽  
Polar Optical Phonon ◽  
Energy Dispersion ◽  
Conduction Bands ◽  
Ionized Impurity Scattering ◽  
Ellipsoidal Approximations

We present the first macroscopical model for charge transport in compound semiconductors to make use of analytic ellipsoidal approximations for the energy dispersion relationships in the neighbours of the lowest minima of the conduction bands. The model considers the main scattering mechanisms charges undergo in polar semiconductors, that is the acoustic, polar optical, intervalley non-polar optical phonon interactions and the ionized impurity scattering. Simulations are shown for the cases of bulk 4H and 6H-SiC.

Sign in / Sign up

Export Citation Format

Share Document