Impurity scattering effect on charge transport in high-Tc cuprate junctions

2004 ◽  
Vol 30 (7) ◽  
pp. 579-590
Author(s):  
Y. Tanaka ◽  
Y. Asano ◽  
S. Kashiwaya
2006 ◽  
Vol 435 (1-2) ◽  
pp. 1-7
Author(s):  
Yukio Tanaka ◽  
Satoshi Kashiwaya ◽  
Yasuhiro Asano ◽  
Takehito Yokoyama

2016 ◽  
Vol 94 (1) ◽  
Author(s):  
Bo Lu ◽  
Pablo Burset ◽  
Yasunari Tanuma ◽  
Alexander A. Golubov ◽  
Yasuhiro Asano ◽  
...  

2016 ◽  
Vol 11 (4) ◽  
Author(s):  
Kang-Kang Hu ◽  
Bo Gao ◽  
Qiu-Cheng Ji ◽  
Yong-Hui Ma ◽  
Hui Zhang ◽  
...  

2005 ◽  
Vol 138 (1-2) ◽  
pp. 159-164 ◽  
Author(s):  
Hisashi Nakagawa ◽  
Ken Obara ◽  
Hideo Yano ◽  
Osamu Ishikawa ◽  
Tohru Hata ◽  
...  

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Tianqi Zhao ◽  
Wen Shi ◽  
Jinyang Xi ◽  
Dong Wang ◽  
Zhigang Shuai

Abstract Both intrinsic and extrinsic charge transport properties of methylammonium lead triiodide perovskites are investigated from first-principles. The weak electron-phonon couplings are revealed, with the largest deformation potential (~ 5 eV) comparable to that of single layer graphene. The intrinsic mobility limited by the acoustic phonon scattering is as high as a few thousands cm2 V−1 s−1 with the hole mobility larger than the electron mobility. At the impurity density of 1018 cm−3, the charged impurity scattering starts to dominate and lowers the electron mobility to 101 cm2 V−1 s−1 and the hole mobility to 72.2 cm2 V−1 s−1. The high intrinsic mobility warrants the long and balanced diffusion length of charge carriers. With the control of impurities or defects as well as charge traps in these perovskites, enhanced efficiencies of solar cells with simplified device structures are promised.


2000 ◽  
Vol 14 (25n27) ◽  
pp. 3012-3019
Author(s):  
V. DALLACASA ◽  
P. DI SIA

We have investigated the consequences of internal fields on transport properties in insulators close to a metal-insulator-superconductor transition. An interpolation formula for the resistivity as a function of temperature describing insulating, metallic and superconducting regimes has been deduced in the framework of a quantum percolation model in which hopping processes on localised states occur. The contribution to the internal fields on carriers has been taken into account up to quadrupole terms. The resistivity follows a law ρ ∪(T0)δ T e(T0/T)1/2 where T0 corresponds to a coulomb gap and exhibits anisotropic quadrupole angular dependence, suggesting a correlation with the pseudo-gap observed in superconductors in the underdoped regime.


2014 ◽  
Vol 5 (1) ◽  
Author(s):  
W. Tabis ◽  
Y. Li ◽  
M. Le Tacon ◽  
L. Braicovich ◽  
A. Kreyssig ◽  
...  

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