scholarly journals Simultaneous metal-insulator and antiferromagnetic transitions in orthorhombic perovskite iridateSr0.94Ir0.78O2.68single crystals

2016 ◽  
Vol 93 (23) ◽  
Author(s):  
H. Zheng ◽  
J. Terzic ◽  
Feng Ye ◽  
X. G. Wan ◽  
D. Wang ◽  
...  
2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Tai Nguyen ◽  
Van Hien Hoang ◽  
Tae-Yeong Koo ◽  
Nam-Suk Lee ◽  
Heon-Jung Kim

AbstractOver the last few decades, manipulating the metal-insulator (MI) transition in perovskite oxides (ABO3) via an external control parameter has been attempted for practical purposes, but with limited success. The substitution of A-site cations is the most widely used technique to tune the MI transition. However, this method introduces unintended disorder, blurring the intrinsic properties. The present study reports the modulation of MI transitions in [10 nm-NdNiO3/t-LaNiO3/10 nm-NdNiO3/SrTiO3 (100)] trilayers (t = 5, 7, 10, and 20 nm) via the control of the LaNiO3 thickness. Upon an increase in the thickness of the LaNiO3 layer, the MI transition temperature undergoes a systematic decrease, demonstrating that bond disproportionation, the MI, and antiferromagnetic transitions are modulated by the LaNiO3 thickness. Because the bandwidth and the MI transition are determined by the Ni-O-Ni bond angle, this unexpected behavior suggests the transfer of the bond angle from the lower layer into the upper. The bond-angle transfer eventually induces a structural change of the orthorhombic structure of the middle LaNiO3 layer to match the structure of the bottom and the top NdNiO3, as evidenced by transmission electron microscopy. This engineering layer sequence opens a novel pathway to the manipulation of the key properties of oxide nickelates, such as the bond disproportionation, the MI transition, and unconventional antiferromagnetism with no impact of disorder.


1998 ◽  
Vol 547 ◽  
Author(s):  
Hideki Taguchi

AbstractOrthorhombic perovskite-type (La0.1Ca0.9)(Mn1-xCox)O3 was synthesized in the range 0.00 ≤ x ≤ 0.08. The Rietveld analysis indicates that the (Mn, Co)-O(1 and 2) distances are independent of the composition (x). Measurements of the electrical resistivity (ρ) and the Seebeck coefficient (α) indicate that (La0.1Ca0.9)(Mn1-xCox)O3 is an n-type semiconductor at the low temperature. At the high temperature, (La0.1Ca0.9)(Mn1-xCox)O3 exhibits a metal-insulator transition in the range 0.0 ≤ x ≤ 0.04. The metal-insulator transition temperature (Tt) increases with increasing the Co3+ ion content, while dρ/dT in the metallic region decreases with increasing the Co3+ ion content. The variation of Ea and T+ is explained by the difference in the electronegativity between Mn and Co atoms. The variation of dρ/dT in the metallic region is explained by the increase in the collective o bond.


2004 ◽  
Vol 114 ◽  
pp. 277-281 ◽  
Author(s):  
J. Wosnitza ◽  
J. Hagel ◽  
O. Stockert ◽  
C. Pfleiderer ◽  
J. A. Schlueter ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document