scholarly journals Scanning tunneling microscopy of superconducting topological surface states inBi2Se3

2016 ◽  
Vol 93 (22) ◽  
Author(s):  
Ian M. Dayton ◽  
Nicholas Sedlmayr ◽  
Victor Ramirez ◽  
Thomas C. Chasapis ◽  
Reza Loloee ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface States ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Topological Surface

Multilayered silicene: the bottom-up approach for a weakly relaxed Si(111) with Dirac surface states

Nanoscale ◽  
2015 ◽  
Vol 7 (38) ◽  
pp. 15880-15885 ◽  
Author(s):  
Huixia Fu ◽  
Lan Chen ◽  
Jian Chen ◽  
Jinglan Qiu ◽  
Zijing Ding ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
First Principles ◽  
Van Der Waals ◽  
Surface States ◽  
Scanning Tunneling ◽  
Diamond Structure ◽  
Tunneling Microscopy ◽  
Bottom Up

Combining first principles investigations and scanning tunneling microscopy, we identify that the presumable van der Waals packed multilayered silicene sheets spontaneously transform into a diamond-structure bulk Si film due to strong interlayer couplings.

scholarly journals Топологические поверхностные состояния фермионов Дирака в термоэлектриках n-Bi-=SUB=-2-=/SUB=-Te-=SUB=-3-y-=/SUB=-Se-=SUB=-y-=/SUB=-

2019 ◽  
Vol 53 (5) ◽  
pp. 654
Author(s):  
Л.Н. Лукьянова ◽  
И.В. Макаренко ◽  
О.А. Усов ◽  
П.А. Дементьев
Keyword(s):  
Dirac Point ◽  
Energy Gap ◽  
Surface States ◽  
Surface Concentration ◽  
Scanning Tunneling ◽  
Fermi Velocity ◽  
Dirac Fermions ◽  
Tunneling Microscopy ◽  
Topological Surface ◽  
Local Distortions

Topological surface states of Dirac fermions in n-Bi2Te3−ySey thermoelectrics L.N. Lukyanova, I.V. Makarenko, O.A. Usov, P.A. Dementev Ioffe Institute, 194021 St. Petersburg, Russia Abstract In n-Bi2Te3 and n-Bi2Te3−ySey thermoelectrics, the surface states of Dirac fermions of the interlayer van der Waals plane (0001) were studied by scanning tunneling microscopy (STM) and spectroscopy. The surface morphology and modulated line profiles of the images in tunneling microscopy is determined by local distortions of the surface electron states density and depend on the composition. The Dirac point ED of the studied compositions is localized in the energy gap, and it shifts to the top of the valence band with increase of Se content in the solid solutions. The dependence between Dirac surface state parameters (the Dirac point position, the Fermi velocity, the fermion surface concentration) and thermoelectric properties (Seebeck coefficient and the power factor) is established for the thermoelectrics studied.

The Coexistence of Superconductivity and Topological Order in the Bi2Se3 Thin Films

Science ◽  
2012 ◽  
Vol 336 (6077) ◽  
pp. 52-55 ◽  
Author(s):  
Mei-Xiao Wang ◽  
Canhua Liu ◽  
Jin-Peng Xu ◽  
Fang Yang ◽  
Lin Miao ◽  
...  
Keyword(s):  
Thin Films ◽  
Three Dimensional ◽  
Surface States ◽  
Scanning Tunneling ◽  
Majorana Fermions ◽  
Topological Order ◽  
Tunneling Microscopy ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Topological Surface ◽  
Quantum Phenomena

Three-dimensional topological insulators (TIs) are characterized by their nontrivial surface states, in which electrons have their spin locked at a right angle to their momentum under the protection of time-reversal symmetry. The topologically ordered phase in TIs does not break any symmetry. The interplay between topological order and symmetry breaking, such as that observed in superconductivity, can lead to new quantum phenomena and devices. We fabricated a superconducting TI/superconductor heterostructure by growing dibismuth triselenide (Bi2Se3) thin films on superconductor niobium diselenide substrate. Using scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we observed the superconducting gap at the Bi2Se3 surface in the regime of Bi2Se3 film thickness where topological surface states form. This observation lays the groundwork for experimentally realizing Majorana fermions in condensed matter physics.

Depth Dependence of Dopant Induced Features on The Si(100)2x1:H Surface and Its Application for Three Dimensional Dopant Profiling

2001 ◽  
Vol 699 ◽  
Author(s):  
Lequn Liu ◽  
Jixin Yu ◽  
Joseph W. Lyding
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Electronic Device ◽  
Three Dimensional ◽  
Surface States ◽  
Scanning Tunneling ◽  
Dopant Atom ◽  
Tunneling Microscopy ◽  
Dopant Profiling ◽  
Device Structures ◽  
Subsurface Layers

AbstractThe lack of surface states within the band gap of the perfect Si(100)2x1:H surface opens the way to scanning tunneling microscopy studies of dopant atom sites in Si(100). In this paper, Boron and Arsenic induced features are studied by ultrahigh vacuum scanning tunneling microscopy. The values of their amplitudes naturally group such that several subsurface layers can be identified. This technique for producing atom-resolved three-dimensional maps of electrically active dopants in silicon may be a useful metric for characterizing dopant profiles in ultra-small electronic device structures.

Scanning tunneling microscopy investigations of unoccupied surface states in two-dimensional semiconducting β-√3 × √3-Bi/Si(111) surface

2018 ◽  
Vol 20 (30) ◽  
pp. 20188-20193 ◽  
Author(s):  
Jian Gou ◽  
Long-Juan Kong ◽  
Wen-Bin Li ◽  
Shao-Xiang Sheng ◽  
Hui Li ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface States ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Tunneling Microscopy

The lowest unoccupied states with Rashba splitting of β-√3 × √3-Bi are proved to be contributed by surface bismuth atoms.

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