scholarly journals Tunable inverse topological heterostructure utilizing(Bi1−xInx)2Se3and multichannel weak-antilocalization effect

2016 ◽  
Vol 93 (12) ◽  
Author(s):  
Matthew J. Brahlek ◽  
Nikesh Koirala ◽  
Jianpeng Liu ◽  
Tahir I. Yusufaly ◽  
Maryam Salehi ◽  
...  
Keyword(s):  
Weak Antilocalization

scholarly journals Electron-electron interactions and weak antilocalization in few-layer ZrTe5 devices

2021 ◽  
Vol 103 (15) ◽  
Author(s):  
Zhijian Xie ◽  
Xinjian Wei ◽  
Shimin Cao ◽  
Yu Zhang ◽  
Shili Yan ◽  
...  
Keyword(s):  
Weak Antilocalization ◽  
Electron Interactions

Weak Antilocalization in Bi2(SexTe1–x)3Nanoribbons and Nanoplates

Nano Letters ◽  
2012 ◽  
Vol 12 (2) ◽  
pp. 1107-1111 ◽  
Author(s):  
Judy J. Cha ◽  
Desheng Kong ◽  
Seung-Sae Hong ◽  
James G. Analytis ◽  
Keji Lai ◽  
...  
Keyword(s):  
Weak Antilocalization

scholarly journals Quantum Oscillations and Chiral Anomaly in a Bi0.96Sb0.04 Single Crystal

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Gongqin Xu ◽  
Anne de Visser ◽  
Yingkai Huang ◽  
Xingyu Mao
Keyword(s):  
Electrical Current ◽  
Band Edge ◽  
Chiral Anomaly ◽  
Conduction Band Edge ◽  
Special Significance ◽  
Weak Antilocalization ◽  
Quantum Oscillations ◽  
The Magnetic Field ◽  
Haas Effect ◽  
Topological Term

Bi1-xSbx alloys are of special significance in topological insulator research. Here we focus on the Bi0.96Sb0.04 alloy in which the conduction band edge just touches the valence band edge. Transport measurements show quantum oscillations in the longitudinal (Shubnikov–de Haas effect) and transverse magnetoresistance originating from a spheroidal Fermi surface pocket. Further investigation of the longitudinal magnetoresistance for the magnetic field parallel to the electrical current shows a small nonmonotonic magnetoresistance that is attributed to a competition of weak-antilocalization effects and a topological term related to the chiral anomaly.

scholarly journals Квантовая когерентность и эффект Кондо в двумерном электронном газе магнитно-нелегированных гетероструктур AlGaN/GaN

2020 ◽  
Vol 54 (9) ◽  
pp. 962
Author(s):  
Н.К. Чумаков ◽  
И.А. Черных ◽  
A.Б. Давыдов ◽  
И.С. Езубченко ◽  
Ю.В. Грищенко ◽  
...  
Keyword(s):  
Kondo Effect ◽  
Electron Gas ◽  
Weak Localization ◽  
Zero Field ◽  
Dimensional Electron ◽  
Weak Antilocalization ◽  
Temperature Dependent ◽  
Localization Theory ◽  
Magnetic Transport ◽  
Dimensional Electron Gas

Abstract The unusual observation of the Kondo effect in the two-dimensional electron gas (2DEG) of magnetically undoped AlGaN/GaN heterostructures is reported. The temperature-dependent zero-field resistivity data exhibits an upturn below 120 K, while the standard low-temperature weak localization and then weak antilocalization behaviour is revealed at T → 0. Magnetic transport investigations of the system are performed in the temperature range of 0.1–300 K and at magnetic fields up to 8 T, applied perpendicularly to the 2DEG plane. The experimental data are analyzed in terms of the multichannel Kondo model for d _0 magnetic materials and weak localization theory taking into account the spin-orbit interaction.

scholarly journals Weak antilocalization and linear magnetoresistance in the surface state ofSmB6

2016 ◽  
Vol 94 (20) ◽  
Author(s):  
S. Thomas ◽  
D. J. Kim ◽  
S. B. Chung ◽  
T. Grant ◽  
Z. Fisk ◽  
...  
Keyword(s):  
Surface State ◽  
Weak Antilocalization ◽  
Linear Magnetoresistance

Weak Antilocalization and Spin Hall Effect in Pt Films Doped with Molecular Spin

2020 ◽  
Vol 2 (7) ◽  
pp. 2098-2103
Author(s):  
Wataru Iwamoto ◽  
Takashi Yamamoto ◽  
Kaname Tsuchii ◽  
Yuya Tazaki ◽  
Akio Asami ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Weak Antilocalization ◽  
Molecular Spin ◽  
Pt Films

scholarly journals Weak antilocalization in Cd3As2 thin films

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Bo Zhao ◽  
Peihong Cheng ◽  
Haiyang Pan ◽  
Shuai Zhang ◽  
Baigeng Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Weak Antilocalization
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