scholarly journals Weak antilocalization in Cd3As2 thin films

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Bo Zhao ◽  
Peihong Cheng ◽  
Haiyang Pan ◽  
Shuai Zhang ◽  
Baigeng Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Weak Antilocalization

scholarly journals Evidence of weak antilocalization in epitaxial TiN thin films

2020 ◽  
Vol 498 ◽  
pp. 166094
Author(s):  
Siddharth Gupta ◽  
Ritesh Sachan ◽  
Jagdish Narayan
Keyword(s):  
Thin Films ◽  
Weak Antilocalization ◽  
Tin Thin Films

Metallic conductivity and weak antilocalization in Bi2 Te2.7 Se0.3 thin films

2015 ◽  
Vol 12 (6) ◽  
pp. 822-825
Author(s):  
Nadir A. Abdullayev ◽  
Afet M. Kerimova ◽  
Khayala V. Aliquliyeva ◽  
Yong Gu Shim ◽  
Kojiro Mimura ◽  
...  
Keyword(s):  
Thin Films ◽  
Weak Antilocalization ◽  
Metallic Conductivity

Transport properties of Bi2Se3 thin films grown by magnetron sputtering

2015 ◽  
Vol 08 (02) ◽  
pp. 1550020 ◽  
Author(s):  
Z. T. Wei ◽  
M. Zhang ◽  
Y. Yan ◽  
X. Kan ◽  
Z. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Transport Properties ◽  
Electrical Transport ◽  
Annealing Treatment ◽  
Atomic Ratio ◽  
Weak Antilocalization ◽  
Electrical Transport Properties ◽  
Sputtering Deposition ◽  
Post Annealing

Epitaxial growth of Bi 2 Se 3 thin films is of great current interest due to the advantages in spintronics and thermoelectrical applications. In this paper, Bi 2 Se 3 thin films on Si (111) substrate have been prepared via magnetron sputtering deposition with post-annealing treatment and their microstructures and electrical transport properties were studied. Good quality with highly c-axis oriented films could be obtained after post-annealing treatment. The annealing temperature (T a ) obviously affected the phase structures and electrical properties. The crystallinity and the lattice parameters c of the Bi 2 Se 3 thin-films increased with increasing T a . The relative atomic ratio of Se / Bi decreased with increasing T a and large number of Se vacancies was discovered in films with T a = 350° C . The resistivity of films decreased monotonously and showed weakly metallic resistivity with the increase of T a . Non-saturated high-field linear magnetoresistance and weak antilocalization were found in films with higher T a .

Weak Antilocalization in Granular Sb2 Te3 Thin Films Deposited by MOCVD

2018 ◽  
Vol 12 (8) ◽  
pp. 1800155 ◽  
Author(s):  
Raimondo Cecchini ◽  
Roberto Mantovan ◽  
Claudia Wiemer ◽  
Lucia Nasi ◽  
Laura Lazzarini ◽  
...  
Keyword(s):  
Thin Films ◽  
Weak Antilocalization

scholarly journals Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films

2019 ◽  
Vol 99 (12) ◽  
Author(s):  
Shouvik Chatterjee ◽  
Shoaib Khalid ◽  
Hadass S. Inbar ◽  
Aranya Goswami ◽  
Felipe Crasto de Lima ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic States ◽  
Two Dimensional ◽  
Weak Antilocalization

Anomalous Magnetoresistance Behavior of Bismuth Antidot Arrays

2003 ◽  
Vol 788 ◽  
Author(s):  
Oded Rabin ◽  
Mildred S. Dresselhaus
Keyword(s):  
Thin Films ◽  
Elastic Scattering ◽  
Theoretical Expression ◽  
Two Dimensional ◽  
Weak Antilocalization ◽  
Scattering Rate ◽  
Glass Slides ◽  
Significant Difference ◽  
Anodic Alumina Templates ◽  
Antidot Arrays

ABSTRACTAntidot arrays were formed in thin films of bismuth by the e-beam evaporation of the metal on the porous surface of porous anodic alumina templates. The magnetoresistance of the antidot array films was measured and compared to that of films deposited on glass slides. A significant difference in magnetoresistance behavior was observed, and this difference was attributed to the enhancement of the two dimensional weak antilocalization effect in the antidot arrays. Scattering rates were obtained by fitting the experimental results to the theoretical expression. The results indicate that the antidot morphology enhances the elastic scattering rate over the inelastic scattering rate.

scholarly journals Evidence for weak-antilocalization–weak-localization crossover and metal-insulator transition in CaCu3Ru4O12 thin films

2021 ◽  
Vol 133 (1) ◽  
pp. 17005
Author(s):  
Subhadip Jana ◽  
Shwetha G. Bhat ◽  
B. C. Behera ◽  
L. Patra ◽  
P. S. Anil Kumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Weak Localization ◽  
Insulator Transition ◽  
Weak Antilocalization ◽  
Metal Insulator Transition ◽  
Metal Insulator

Weak antilocalization in thin films of the Bi2Te2.7Se0.3 solid solution

2016 ◽  
Vol 58 (9) ◽  
pp. 1870-1875
Author(s):  
N. A. Abdullaev ◽  
O. Z. Alekperov ◽  
Kh. V. Aligulieva ◽  
V. N. Zverev ◽  
A. M. Kerimova ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Weak Antilocalization

scholarly journals Weak antilocalization and electron–electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film

Nanoscale ◽  
2016 ◽  
Vol 8 (4) ◽  
pp. 1879-1885 ◽  
Author(s):  
Yumei Jing ◽  
Shaoyun Huang ◽  
Kai Zhang ◽  
Jinxiong Wu ◽  
Yunfan Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Van Der Waals ◽  
Electron Interaction ◽  
Weak Antilocalization ◽  
High Crystalline Quality ◽  
Multiple Channel ◽  
Channel Transport

High crystalline quality topological insulator Bi2Se3 thin films are grown by van der Waals epitaxy on fluorophlogopite mica substrates and the excellent transport properties of the as-grown films are extracted from the magnetotransport measurements.

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