scholarly journals Transport properties of bilayer graphene in a strong in-plane magnetic field

2016 ◽  
Vol 93 (11) ◽  
Author(s):  
M. Van der Donck ◽  
F. M. Peeters ◽  
B. Van Duppen
Keyword(s):  
Magnetic Field ◽  
Transport Properties ◽  
Bilayer Graphene

Electrical transport properties of FeSe single crystal under high magnetic field

2021 ◽  
Vol 64 (8) ◽  
Author(s):  
HongHui Wang ◽  
ZhaoHui Cheng ◽  
MengZhu Shi ◽  
DongHui Ma ◽  
WeiZhuang Zhuo ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Transport Properties ◽  
High Magnetic Field ◽  
Electrical Transport ◽  
Electrical Transport Properties

Transport Properties of Y1−xNdxCo2 in Magnetic Field

2014 ◽  
Author(s):  
Masataka Takeda ◽  
Atsushi Teruya ◽  
Taro Uejo ◽  
Yuichi Hiranaka ◽  
Ai Nakamura ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Transport Properties

INFLUENCE OF NEARBY QD LAYER ON 2DES IN QUANTUM HALL REGIME

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1445-1449
Author(s):  
K. TAKEHANA ◽  
Y. IMANAKA ◽  
T. TAKAMASU ◽  
M. HENINI
Keyword(s):  
Magnetic Field ◽  
Transport Properties ◽  
Gate Voltage ◽  
Quantum Hall ◽  
Electron System ◽  
Hall Resistance ◽  
Field Range ◽  
Voltage Range ◽  
Quantum Hall Regime ◽  
Hall Regime

We have investigated transport properties in high magnetic field of a gated two-dimensional electron system (2DES) separated by a thin barrier from a layer of self-assembled InAs quantum dots (QDs) in the quantum Hall regime. The quality of 2DES was found to be high enough to observe both integer and fractional quantum Hall effect (QHE), despite the proximity of the QD layer to the 2DES. However, significant suppression of the magnetoresistance (ρ xx ) and Hall resistance (ρ xy ) were observed in higher magnetic field range of filling factor ν < 1 when a positive voltage was applied to the front gate. The gate voltage dependence of ρ xx and ρ xy shows a well-defined hysteresis loop at the narrow gate voltage range between -0.2 and +0.2 V at ν < 1, while no anomaly was observed at ν > 1. We deduce that charging and discharging of QDs occurs when the gate voltage is varied around Vg ~ 0 V, which indicates that the electron charge states of the QDs affect the transport properties of the nearby 2DES only at ν < 1. We infer that the spin-flip process induces a non-equilibrium state in the 2DEG, which causes the suppression of ρ xx and ρ xy .

scholarly journals DMRG study of strongly interacting $\mathbb{Z}_2$ flatbands: a toy model inspired by twisted bilayer graphene

2020 ◽  
Vol 3 (2) ◽  
Author(s):  
Paul Eugenio ◽  
Ceren Dag
Keyword(s):  
Magnetic Field ◽  
Time Reversal ◽  
Ground States ◽  
Bilayer Graphene ◽  
Chern Number ◽  
Strong Interactions ◽  
Time Reversal Symmetry ◽  
Density Matrix Renormalization ◽  
Topological Quantum ◽  
Twisted Bilayer Graphene

Strong interactions between electrons occupying bands of opposite (or like) topological quantum numbers (Chern=\pm1=±1), and with flat dispersion, are studied by using lowest Landau level (LLL) wavefunctions. More precisely, we determine the ground states for two scenarios at half-filling: (i) LLL’s with opposite sign of magnetic field, and therefore opposite Chern number; and (ii) LLL’s with the same magnetic field. In the first scenario – which we argue to be a toy model inspired by the chirally symmetric continuum model for twisted bilayer graphene – the opposite Chern LLL’s are Kramer pairs, and thus there exists time-reversal symmetry (\mathbb{Z}_2ℤ2). Turning on repulsive interactions drives the system to spontaneously break time-reversal symmetry – a quantum anomalous Hall state described by one particle per LLL orbital, either all positive Chern |{++\cdots+}\rangle|++⋯+⟩ or all negative |{--\cdots-}\rangle|−−⋯−⟩. If instead, interactions are taken between electrons of like-Chern number, the ground state is an SU(2)SU(2) ferromagnet, with total spin pointing along an arbitrary direction, as with the \nu=1ν=1 spin-\frac{1}{2}12 quantum Hall ferromagnet. The ground states and some of their excitations for both of these scenarios are argued analytically, and further complimented by density matrix renormalization group (DMRG) and exact diagonalization.

scholarly journals Spin-Orbit Coupling Effects on Transport Properties of Electronic Lieb Lattice in the Presence of Magnetic Field

2021 ◽  
Author(s):  
Elham Sadeghi ◽  
Hamed Rezania
Keyword(s):  
Magnetic Field ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Lieb Lattice ◽  
Thermal Conductivities

Abstract In this paper, the transport properties of a two-dimensional Lieb lattice that is a line-centered square lattice are investigated in the presence of magnetic field and spin-orbit coupling. Specially, we address the temperature dependence of electrical and thermal conductivities as well as Seebeck coefficient due to spin-orbit interaction. We have exploited Green’s function approach in order to study thermoelectric and transport properties of Lieb lattice in the context of Kane-Mele model Hamiltonian. The results for Seebeck coefficient show the sign of thermopower is positive in the presence of spin-orbit coupling. Also the temperature dependence of transport properties indicates that the increase of spin-orbit coupling leads to decrease thermal conductivity however the decrease of gap 1 parameter causes the reduction of thermal conductivity. There is a peak in temperature dependence of thermal conductivity for all values of magnetic fields and spin-orbit coupling strengths. Both electrical and thermal conductivities increase with increasing the temperature at low amounts of temperature due to the increasing of transition rate of charge carriers and excitation of them to the conduction bands. Also we have studied the temperature dependence of spin susceptibility of Lieb monolayer due to both spin orbit coupling and magnetic field factors in details.

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