Thickness dependence of crystal and electronic structures within heteroepitaxially grownBiFeO3thin films

2016 ◽  
Vol 93 (6) ◽  
Author(s):  
In-Tae Bae ◽  
Hiroshi Naganuma ◽  
Tomohiro Ichinose ◽  
Kazuhisa Sato
Keyword(s):  
Electronic Structures ◽  
Thickness Dependence

scholarly journals Thickness dependence of electronic structures in VO2 ultrathin films: Suppression of the cooperative Mott-Peierls transition

2020 ◽  
Vol 102 (11) ◽  
Author(s):  
D. Shiga ◽  
B. E. Yang ◽  
N. Hasegawa ◽  
T. Kanda ◽  
R. Tokunaga ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Electronic Structures ◽  
Thickness Dependence ◽  
Peierls Transition

The Nature of Oxide Surfaces: Topographic and Electronic Structure

1993 ◽  
Vol 51 ◽  
pp. 966-967
Author(s):  
Dawn A. Bonnell ◽  
Yong Liang
Keyword(s):  
Transition Metal Oxides ◽  
Electronic Structures ◽  
Recent Progress ◽  
Spatial Localization ◽  
Level Of Detail ◽  
Scanning Tunneling ◽  
Oxide Surfaces ◽  
Tunneling Microscopy ◽  
Considerable Effort ◽  
Complete Understanding

Recent progress in the application of scanning tunneling microscopy (STM) and tunneling spectroscopy (STS) to oxide surfaces has allowed issues of image formation mechanism and spatial resolution limitations to be addressed. As the STM analyses of oxide surfaces continues, it is becoming clear that the geometric and electronic structures of these surfaces are intrinsically complex. Since STM requires conductivity, the oxides in question are transition metal oxides that accommodate aliovalent dopants or nonstoichiometry to produce mobile carriers. To date, considerable effort has been directed toward probing the structures and reactivities of ZnO polar and nonpolar surfaces, TiO2 (110) and (001) surfaces and the SrTiO3 (001) surface, with a view towards integrating these results with the vast amount of previous surface analysis (LEED and photoemission) to build a more complete understanding of these surfaces. However, the spatial localization of the STM/STS provides a level of detail that leads to conclusions somewhat different from those made earlier.

FILM THICKNESS DEPENDENCE OF HEAT TRANSMISSION INTO HELIUM

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-825-C6-827
Author(s):  
P. Taborek ◽  
M. Sinvani ◽  
M. Weimer ◽  
D. Goodstein
Keyword(s):  
Film Thickness ◽  
Thickness Dependence ◽  
Heat Transmission

THICKNESS DEPENDENCE OF CATHODOLUMINESCENCE IN THIN FILMS

1989 ◽  
Vol 50 (C6) ◽  
pp. C6-177-C6-177
Author(s):  
J. YUAN ◽  
S. BERGER ◽  
L. M. BROWN
Keyword(s):  
Thin Films ◽  
Thickness Dependence

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Advanced Electronic Structures

1992 ◽  
Author(s):  
Mark van Schilfgaarde
Keyword(s):  
Electronic Structures
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