scholarly journals Band-gap narrowing in Mn-doped GaAs probed by room-temperature photoluminescence

2015 ◽  
Vol 92 (22) ◽  
Author(s):  
S. Prucnal ◽  
K. Gao ◽  
I. Skorupa ◽  
L. Rebohle ◽  
L. Vines ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Room Temperature Photoluminescence ◽  
Band Gap Narrowing ◽  
Mn Doped

Fabrication and Optical Properties of Mn Doped ZnS Nanowires

2011 ◽  
Vol 236-238 ◽  
pp. 2211-2215
Author(s):  
Jun Jie Qi ◽  
Qi Zhang ◽  
Qing Liang Liao ◽  
Zhan Qiang Deng ◽  
Yue Zhang
Keyword(s):  
Optical Properties ◽  
Aspect Ratio ◽  
Room Temperature ◽  
Green Emission ◽  
Deposition Method ◽  
Photoluminescence Properties ◽  
Room Temperature Photoluminescence ◽  
The Common ◽  
Strong Green Emission ◽  
Mn Doped

Mn doped ZnS nanowires with typical wurtzite single-crystalline structure were successfully synthesized via H2 assistant chemical evaporation deposition method. The investigations indicated that the diameter of Mn/ZnS Nanowire with high aspect ratio is 25~40nm, EDS results show that the content of Mn element is about 4.45at%. HRTEM and SAED results demonstrated that the Mn/ZnS nanowires grow along [101] direction, which was different from the common direction reported in literatures. Room temperature photoluminescence properties were also examined, showing a strong green emission centered at 523.04 nm, and a weak emission at 382.53 nm was also observed, showing a red shift of 45.53 nm comparing to the intrinsic luminescence.

Composition Dependent Optical Properties of Zn1-xCdxS Nanostructures

2013 ◽  
Vol 669 ◽  
pp. 335-339
Author(s):  
Xue Yun Song ◽  
Xiu Xi Wang ◽  
Xiang Hua Zeng ◽  
Yong Zhang ◽  
Yi Pei Hu ◽  
...  
Keyword(s):  
Methylene Blue ◽  
Optical Properties ◽  
Band Gap ◽  
Mole Fraction ◽  
Room Temperature ◽  
Lattice Structure ◽  
Red Shift ◽  
Alloy Nanoparticles ◽  
Photoluminescence Spectra ◽  
Room Temperature Photoluminescence

Zn1-xCdxS alloy nanoparticles have been prepared via solvothermal approach. The effects of the mole fraction of Cd on the nanoparticles’ structure, size and photoluminescence spectra were investigated. It shows that with increase in mole fraction of Cd, the lattice structure of Zn1-xCdxS changes from cubic to hexagonal, and the size of these nanoparticles varied within 6-40nm. Room temperature photoluminescence measurements show an intense red shift from 518nm to 662nm. And the band gap energies from 2.3 to 3.54eV can be realized for the Zn1-xCdxS nanopartices. Furthermore, it is found that the conversion of Methylene Blue (MB) using Zn0.6Cd0.4S as the photocatalyst was up to 97% after 2h of irradiation.

Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

2013 ◽  
Vol 102 (10) ◽  
pp. 102112 ◽  
Author(s):  
X. L. Wang ◽  
C. Y. Luan ◽  
Q. Shao ◽  
A. Pruna ◽  
C. W. Leung ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Room Temperature ◽  
Magnetic Order ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mn Doped

Comparison of the Band Gap of Porous Silicon as Measured by Photoelectron Spectroscopy and Photoluminescence

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Van Buuren ◽  
S. Eisebitt ◽  
S. Patitsas ◽  
S. Ritchie ◽  
T. Tiedje ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Band Gap ◽  
Current Density ◽  
Absorption Edge ◽  
Photoelectron Spectroscopy ◽  
Photoluminescence Spectrum ◽  
Room Temperature ◽  
Room Temperature Photoluminescence ◽  
Preparation Conditions ◽  
Peak Energy

ABSTRACTThe peak energy of the room temperature photoluminescence of porous silicon is compared with the bandgap determined from photoelectron spectroscopy measurements for a series of porous silicon samples prepared under different conditions. The photoluminescence bandgap is found to be smaller than the photoelectron spectroscopy bandgap, but exhibits the same trend with preparation conditions. The width of both the photoluminescence spectrum and the L-absorption edge increases when the current density during the preparation is increased or the sample is allowed to soak in HF after preparation.

scholarly journals Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
E. Kasper ◽  
M. Oehme ◽  
T. Arguirov ◽  
J. Werner ◽  
M. Kittler ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Forward Bias ◽  
Laser Wavelength ◽  
Carrier Injection ◽  
Direct Band Gap ◽  
Layer Sequence ◽  
Impurity Interaction ◽  
Direct Band ◽  
Band Gap Narrowing

Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV) and highly doped Ge (0.73 eV). Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

Degradation in a Methyl-phenyl Co-Polymeric Polysilane for LED Applications

2003 ◽  
Vol 769 ◽  
Author(s):  
Asha Sharma ◽  
Deepak ◽  
Monica Katiyar ◽  
Satyendra Kumar ◽  
V. Chandrasekhar ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Weight ◽  
Light Source ◽  
Room Temperature ◽  
Light Exposure ◽  
Room Temperature Photoluminescence ◽  
Pl Spectrum ◽  
Pl Intensity ◽  
Methyl Phenyl

AbstractThe optical degradation of polysilane copolymer has been studied in spin cast thin films and solutions using light source of 325 nm wavelength. The room temperature photoluminescence (PL) spectrum of these films show a sharp emission at 368 nm when excited with a source of 325 nm. However, the PL intensity deteriorates with time upon light exposure. Further the causes of this degradation have been examined by characterizing the material for its transmission behaviour and changes occurring in molecular weight as analysed by GPC data.

Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature ZT in tin telluride

2019 ◽  
Vol 7 (16) ◽  
pp. 4817-4821 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
High Performance ◽  
Room Temperature ◽  
Band Offset ◽  
Valence Band Offset ◽  
Co Doping ◽  
Tin Telluride ◽  
Structure Engineering

Resonance states due to Bi and In co-doping, band gap enlargement, and a reduced valence-band offset in SnTe lead to a record high room-temperature ZT.

scholarly journals Gold-Hyperdoped Germanium with Room-Temperature Sub-Band-Gap Optoelectronic Response

2020 ◽  
Vol 14 (6) ◽  
Author(s):  
Hemi H. Gandhi ◽  
David Pastor ◽  
Tuan T. Tran ◽  
S. Kalchmair ◽  
L.A. Smilie ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature
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