scholarly journals Localization and spin transport in honeycomb structures with spin-orbit coupling

2015 ◽  
Vol 92 (20) ◽  
Author(s):  
S. L. A. de Queiroz
2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Fuhong Mei ◽  
Shan Zhang ◽  
Ning Tang ◽  
Junxi Duan ◽  
Fujun Xu ◽  
...  

2011 ◽  
Vol 25 (07) ◽  
pp. 487-496
Author(s):  
XI FU ◽  
ZESHUN CHEN ◽  
FENG ZHONG ◽  
YONGHONG KONG

We investigate theoretically the electron transport properties of a quantum wire (QW) non-adiabatically connected to two normal leads with weak Dresselhaus spin-orbit coupling (DSOC). Using the scattering matrix method and Landauer–Büttiker formula within the effective free-electron approximation, we have calculated the spin-dependent conductances G↑/↓ and spin polarization Pz of a hard-wall potential confined QW. It is demonstrated that regardless of the existence of DSOC G↑/↓ and Pz present oscillation structures near the subband edges of QW, and the number of quantized conductance plateaus is determined by the number of propagation modes in two leads. Moreover, the DSOC induces splitting of spin-up and spin-down conductance plateaus as well as the existence of spin polarization (Pz ≠ 0), and the enhancement of Dresselhaus strength destroys the conductance plateaus for the wide QW case. The above results indicate that the spin-dependent conductances and Pz are strongly dependent on the Dresselhaus strength which is the physical basis for spin transistor.


2018 ◽  
Vol 32 (05) ◽  
pp. 1850055 ◽  
Author(s):  
Ranber Singh

The spin–orbit splitting (E[Formula: see text]) of valence band maximum at the [Formula: see text] point is significantly smaller in 2D planner honeycomb structures of graphene, silicene, germanene and BN than that in the corresponding 3D bulk counterparts. For 2D planner honeycomb structure of SiC, it is almost same as that for 3D bulk cubic SiC. The bandgap which opens at the K and K[Formula: see text] points due to spin–orbit coupling (SOC) is very small in flat honeycomb structures of graphene and silicene, while in germanene it is about 2 meV. The buckling in these structures of graphene, silicene and germanene increases the bandgap opened at the K and K[Formula: see text] points due to SOC quadratically, while the E[Formula: see text] of valence band maximum at the [Formula: see text] point decreases quadratically with an increase in the magnitude of buckling.


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