scholarly journals Spin coherence and echo modulation of the silicon vacancy in4H−SiCat room temperature

2015 ◽  
Vol 92 (16) ◽  
Author(s):  
S. G. Carter ◽  
Ö. O. Soykal ◽  
Pratibha Dev ◽  
Sophia E. Economou ◽  
E. R. Glaser
Keyword(s):  
Room Temperature ◽  
Spin Coherence ◽  
Silicon Vacancy

scholarly journals Optical spin initialization of spin- 32 silicon vacancy centers in 6H−SiC at room temperature

2021 ◽  
Vol 103 (10) ◽  
Author(s):  
Harpreet Singh ◽  
Andrei N. Anisimov ◽  
Ilia D. Breev ◽  
Pavel G. Baranov ◽  
Dieter Suter
Keyword(s):  
Room Temperature ◽  
Silicon Vacancy

Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 371-374 ◽  
Author(s):  
Andreas Gällström ◽  
Björn Magnusson ◽  
Patrick Carlsson ◽  
Nguyen Tien Son ◽  
Anne Henry ◽  
...  
Keyword(s):  
High Temperature ◽  
Cooling Rate ◽  
High Purity ◽  
Room Temperature ◽  
Deep Levels ◽  
High Temperature Annealing ◽  
Cooling Rates ◽  
Silicon Vacancy

The influence of different cooling rates on deep levels in 4H-SiC after high temperature annealing has been investigated. The samples were heated from room temperature to 2300°C, followed by a 20 minutes anneal at this temperature. Different subsequent cooling sequences down to 1100°C were used. The samples have been investigated using photoluminescence (PL) and IV characteristics. The PL intensities of the silicon vacancy (VSi) and UD-2, were found to increase with a faster cooling rate.

scholarly journals Room-temperature spin coherence in ZnO

2005 ◽  
Vol 86 (23) ◽  
pp. 232507 ◽  
Author(s):  
S. Ghosh ◽  
V. Sih ◽  
W. H. Lau ◽  
D. D. Awschalom ◽  
S.-Y. Bae ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Coherence

scholarly journals Electron spin coherence near room temperature in magnetic quantum dots

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Fabrizio Moro ◽  
Lyudmila Turyanska ◽  
James Wilman ◽  
Alistair J. Fielding ◽  
Michael W. Fay ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Spin ◽  
Room Temperature ◽  
Spin Coherence ◽  
Magnetic Quantum Dots

scholarly journals Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Fumiya Nagasawa ◽  
Makoto Takamura ◽  
Hiroshi Sekiguchi ◽  
Yoshinori Miyamae ◽  
Yoshiaki Oku ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Photoluminescence Spectra ◽  
Bulk Silicon ◽  
Electron Dose ◽  
Vacancy Defects ◽  
Silicon Vacancy ◽  
Temperature Electron ◽  
Electroluminescence Intensity ◽  
Bulk Substrate

AbstractWe investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originating from silicon-vacancy defects. For a diode exposed to an electron dose of $$1 \times 10^{18}\,{{\mathrm{cm}}}^{-2}$$ 1 × 10 18 cm - 2 at $$800\,{{\mathrm{keV}}}$$ 800 keV , the electroluminescence intensity of these defects is most prominent within a wavelength range of 400–$$1100\,{{\mathrm{nm}}}$$ 1100 nm . The commonly observed $${{\mathrm{D}}}_1$$ D 1 emission was sufficiently suppressed in the electroluminescence spectra of all the fabricated diodes, while it was detected in the photoluminescence measurements. The photoluminescence spectra also displayed emission lines from silicon-vacancy defects.

Long-lived, room-temperature electron spin coherence in colloidal CdS quantum dots

2012 ◽  
Vol 100 (12) ◽  
pp. 122406 ◽  
Author(s):  
D. H. Feng ◽  
X. Li ◽  
T. Q. Jia ◽  
X. Q. Pan ◽  
Z. R. Sun ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Spin ◽  
Room Temperature ◽  
Cds Quantum Dots ◽  
Spin Coherence ◽  
Temperature Electron ◽  
Colloidal Cds

scholarly journals Spin Readout Techniques of the Nitrogen-Vacancy Center in Diamond

Micromachines ◽  
2018 ◽  
Vol 9 (9) ◽  
pp. 437 ◽  
Author(s):  
David Hopper ◽  
Henry Shulevitz ◽  
Lee Bassett
Keyword(s):  
Quantum Information ◽  
Electron Spin ◽  
Room Temperature ◽  
Information Science ◽  
Nitrogen Vacancy ◽  
Single Shot ◽  
Spin Coherence ◽  
Quantum Information Science ◽  
Nitrogen Vacancy Center ◽  
Vacancy Center

The diamond nitrogen-vacancy (NV) center is a leading platform for quantum information science due to its optical addressability and room-temperature spin coherence. However, measurements of the NV center’s spin state typically require averaging over many cycles to overcome noise. Here, we review several approaches to improve the readout performance and highlight future avenues of research that could enable single-shot electron-spin readout at room temperature.

Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing

2019 ◽  
Vol 963 ◽  
pp. 709-713
Author(s):  
Yoji Chiba ◽  
Yuichi Yamazaki ◽  
Takahiro Makino ◽  
Shinichiro Sato ◽  
Naoto Yamada ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Proton Beam ◽  
Room Temperature ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Proton Beam Writing ◽  
Pn Junction ◽  
Optically Detected Magnetic Resonance ◽  
Junction Diode ◽  
Optically Detected

We demonstrated that silicon vacancy (VSi) can be created in SiC pn junction diode by proton beam writing (PBW) without degradation of the diode performance. The VSi showed the same specific emission for both optically and electrically excitation, which suggests that electrically controllable VSi was created. In addition, optically detected magnetic resonance (ODMR) signal was successfully detected from optically excited VSi at room temperature. This result suggests that VSi introduced into the device by PBW still maintain spin manipulating capability, which is an important step toward realizing SiC devices internally equipped with a VSi-based quantum sensor.

scholarly journals Room Temperature Electrically Detected Nuclear Spin Coherence of NV Centres in Diamond

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
H. Morishita ◽  
S. Kobayashi ◽  
M. Fujiwara ◽  
H. Kato ◽  
T. Makino ◽  
...  
Keyword(s):  
Nuclear Spin ◽  
Room Temperature ◽  
Spin Coherence

scholarly journals Room temperature electron spin coherence in telecom-wavelength quaternary quantum wells

2006 ◽  
Vol 89 (14) ◽  
pp. 142104 ◽  
Author(s):  
W. H. Lau ◽  
V. Sih ◽  
N. P. Stern ◽  
R. C. Myers ◽  
D. A. Buell ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electron Spin ◽  
Room Temperature ◽  
Spin Coherence ◽  
Temperature Electron ◽  
Telecom Wavelength
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