Optical power-driven electron spin relaxation regime crossover in Mn-doped bulk GaAs

2015 ◽  
Vol 92 (11) ◽  
Author(s):  
F. Münzhuber ◽  
T. Kiessling ◽  
W. Ossau ◽  
L. W. Molenkamp ◽  
G. V. Astakhov
2008 ◽  
Vol 93 (13) ◽  
pp. 132112 ◽  
Author(s):  
S. Oertel ◽  
J. Hübner ◽  
M. Oestreich

2008 ◽  
Vol 101 (7) ◽  
Author(s):  
G. V. Astakhov ◽  
R. I. Dzhioev ◽  
K. V. Kavokin ◽  
V. L. Korenev ◽  
M. V. Lazarev ◽  
...  

Author(s):  
А.Е. Евдокимов ◽  
М.С. Кузнецова ◽  
А.В. Михайлов ◽  
К.В. Кавокин ◽  
Р.И. Джиоев

The behavior of the electron spin relaxation time in bulk GaAs layers doped with Mn was studied experimentally. We investigated the dependence of the degree of circular polarization of photoluminescence in transverse and longitudinal magnetic fields. An increase in the relaxation time of the electron spin is found from 25 ns at low pumping power to 400 ns at the threshold pumping power. The effect of resonant cooling of the nuclear spin system by optically oriented electron spins is demonstrated.


2021 ◽  
Vol 125 (3) ◽  
pp. 841-849 ◽  
Author(s):  
Krzysztof Tadyszak ◽  
Radosław Mrówczyński ◽  
Raanan Carmieli

2016 ◽  
Vol 108 (8) ◽  
pp. 082103 ◽  
Author(s):  
S. Azaizia ◽  
A. Balocchi ◽  
H. Carrère ◽  
P. Renucci ◽  
T. Amand ◽  
...  

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