High temperature electron spin relaxation in bulk GaAs

2008 ◽  
Vol 93 (13) ◽  
pp. 132112 ◽  
Author(s):  
S. Oertel ◽  
J. Hübner ◽  
M. Oestreich
Keyword(s):  
High Temperature ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Bulk Gaas ◽  
Electron Spin Relaxation ◽  
Temperature Electron

Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3μm

2006 ◽  
Vol 89 (21) ◽  
pp. 211122 ◽  
Author(s):  
C. Reith ◽  
S. J. White ◽  
M. Mazilu ◽  
A. Miller ◽  
J. Konttinen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Electron Spin Relaxation ◽  
Temperature Electron

scholarly journals Room-Temperature Electron Spin Relaxation of Triarylmethyl Radicals at the X- and Q-Bands

2015 ◽  
Vol 119 (43) ◽  
pp. 13630-13640 ◽  
Author(s):  
Andrey A. Kuzhelev ◽  
Dmitry V. Trukhin ◽  
Olesya A. Krumkacheva ◽  
Rodion K. Strizhakov ◽  
Olga Yu. Rogozhnikova ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
Electron Spin ◽  
Room Temperature ◽  
Electron Spin Relaxation ◽  
Temperature Electron ◽  
Triarylmethyl Radicals

Optical power-driven electron spin relaxation regime crossover in Mn-doped bulk GaAs

2015 ◽  
Vol 92 (11) ◽  
Author(s):  
F. Münzhuber ◽  
T. Kiessling ◽  
W. Ossau ◽  
L. W. Molenkamp ◽  
G. V. Astakhov
Keyword(s):  
Spin Relaxation ◽  
Electron Spin ◽  
Optical Power ◽  
Bulk Gaas ◽  
Electron Spin Relaxation ◽  
Mn Doped

Room-temperature electron spin relaxation of nitroxides immobilized in trehalose: Effect of substituents adjacent to NO-group

2016 ◽  
Vol 266 ◽  
pp. 1-7 ◽  
Author(s):  
Andrey A. Kuzhelev ◽  
Rodion K. Strizhakov ◽  
Olesya A. Krumkacheva ◽  
Yuliya F. Polienko ◽  
Denis A. Morozov ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
Electron Spin ◽  
Room Temperature ◽  
Electron Spin Relaxation ◽  
Effect Of Substituents ◽  
Temperature Electron

Room-temperature electron spin relaxation in bulk InAs

2000 ◽  
Vol 77 (9) ◽  
pp. 1333-1335 ◽  
Author(s):  
Thomas F. Boggess ◽  
J. T. Olesberg ◽  
C. Yu ◽  
Michael E. Flatté ◽  
Wayne H. Lau
Keyword(s):  
Spin Relaxation ◽  
Electron Spin ◽  
Room Temperature ◽  
Electron Spin Relaxation ◽  
Temperature Electron

scholarly journals Релаксация электронного спина и резонансное охлаждение ядерных спинов в структурах GaAs : Mn

2021 ◽  
Vol 55 (9) ◽  
pp. 738
Author(s):  
А.Е. Евдокимов ◽  
М.С. Кузнецова ◽  
А.В. Михайлов ◽  
К.В. Кавокин ◽  
Р.И. Джиоев
Keyword(s):  
Relaxation Time ◽  
Magnetic Fields ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Spin System ◽  
Nuclear Spin ◽  
Pumping Power ◽  
Bulk Gaas ◽  
Electron Spin Relaxation ◽  
Nuclear Spin System

The behavior of the electron spin relaxation time in bulk GaAs layers doped with Mn was studied experimentally. We investigated the dependence of the degree of circular polarization of photoluminescence in transverse and longitudinal magnetic fields. An increase in the relaxation time of the electron spin is found from 25 ns at low pumping power to 400 ns at the threshold pumping power. The effect of resonant cooling of the nuclear spin system by optically oriented electron spins is demonstrated.

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