Dependence of alloying and island composition on terrace width: Growth of Cu on Ag(100)

2015 ◽  
Vol 92 (4) ◽  
Author(s):  
Agnes Beichert ◽  
Christopher Zaum ◽  
Karina Morgenstern
Keyword(s):  
Terrace Width

Rem Study of Current Effect on the Structure of Clean Si(111) Surface

1990 ◽  
Vol 48 (1) ◽  
pp. 306-307
Author(s):  
A. Yamanaka ◽  
H. Ohse ◽  
K. Yagi
Keyword(s):  
The Other ◽  
Current Direction ◽  
Clean Surface ◽  
Current Effect ◽  
Atomic Steps ◽  
Step Bunching ◽  
Terrace Width ◽  
Step Down ◽  
A Current

Recently current effects on clean and metal adsorbate surfaces have attracted much attention not only because of interesting phenomena but also because of practically importance in treatingclean and metal adsorbate surfaces [1-6]. In the former case, metals deposited migrate on the deposit depending on the current direction and a patch of the deposit expands on the clean surface [1]. The migration is closely related to the adsorbate structures and substrate structures including their anisotropy [2,7]. In the latter case, configurations of surface atomic steps depends on the current direction. In the case of Si(001) surface equally spaced array of monatom high steps along the [110] direction produces the 2x1 and 1x2 terraces. However, a relative terrace width of the two domain depends on the current direction; a step-up current widen terraces on which dimers are parallel to the current, while a step-down current widen the other terraces [3]. On (111) surface, a step-down current produces step bunching at temperatures between 1250-1350°C, while a step-up current produces step bunching at temperatures between 1050-1250°C [5].In the present paper, our REM observations on a current induced step bunching, started independently, are described.Our results are summarized as follows.(1) Above around 1000°C a step-up current induces step bunching. The phenomenon reverses around 1200 C; a step-down current induces step bunching. The observations agree with the previous reports [5].

Self Organized Array of Quantum Nanostructures Via a Strain Induced Morphological Instability

2001 ◽  
Vol 707 ◽  
Author(s):  
David Montiel ◽  
Judith Müller ◽  
Eugenia Corvera Poiré
Keyword(s):  
Stability Analysis ◽  
Linear Stability Analysis ◽  
Morphological Instability ◽  
Heteroepitaxial Growth ◽  
Dominant Mechanism ◽  
Quantum Nanostructures ◽  
Spontaneous Formation ◽  
Self Organized ◽  
Aspect Ratios ◽  
Terrace Width

ABSTRACTMotivated by the work of Li et al. [1], we have studied the strain induced morphological instability at the submonolayer coverage stage of heteroepitaxial growth on a vicinal substrate with regularly spaced steps. We have performed a linear stability analysis and determined for which conditions of coverage a flat front is unstable and for which conditions it is stable. For low coverages the instability will cause the front to break in an array of islands. Assuming that the fastest growing mode of the instability determines t he properties of the array, we make an estimation of the islands sizes and aspect ratios as well as an estimation of the separation length between islands of the array formed when the dominant mechanism for transport of matter is diffusion of particles along the growing front. These estimations are given as functions of the terrace width and coverage. Since these ones are experimentally controllable parameters, our results could be used to tailor the spontaneous formation of quantum nanostructures.

Terrace width evolution during step‐flow growth with multiterrace adatom migration

1993 ◽  
Vol 73 (11) ◽  
pp. 7351-7357 ◽  
Author(s):  
S. A. Chalmers ◽  
J. Y. Tsao ◽  
A. C. Gossard
Keyword(s):  
Step Flow ◽  
Terrace Width ◽  
Step Flow Growth

Vicinal surfaces: free energy, terrace width distribution and step correlation functions

1999 ◽  
Vol 432 (1-2) ◽  
pp. 139-154 ◽  
Author(s):  
E. Le Goff ◽  
L. Barbier ◽  
L. Masson ◽  
B. Salanon
Keyword(s):  
Free Energy ◽  
Correlation Functions ◽  
Vicinal Surfaces ◽  
Terrace Width ◽  
Width Distribution

Lateral motion of terrace width distributions during step‐flow growth

1992 ◽  
Vol 61 (6) ◽  
pp. 645-647 ◽  
Author(s):  
S. A. Chalmers ◽  
J. Y. Tsao ◽  
A. C. Gossard
Keyword(s):  
Lateral Motion ◽  
Step Flow ◽  
Terrace Width ◽  
Step Flow Growth

scholarly journals Extraction of step-repulsion strengths from terrace width distributions: statistical and analytical considerations

2000 ◽  
Vol 453 (1-3) ◽  
pp. 59-74 ◽  
Author(s):  
H.L. Richards ◽  
S.D. Cohen ◽  
T.L. Einstein ◽  
M. Giesen
Keyword(s):  
Terrace Width

Terrace width ordering mechanism during epitaxial growth on a slightly tilted substrate

1989 ◽  
Vol 94 (1) ◽  
pp. 46-52 ◽  
Author(s):  
Yasuhiro Tokura ◽  
Hisao Saito ◽  
Takashi Fukui
Keyword(s):  
Epitaxial Growth ◽  
Terrace Width

Step Bunching during SiGe Growth on Vicinal Si(111) Surfaces

1999 ◽  
Vol 584 ◽  
Author(s):  
H. Hibino ◽  
T. Ogino
Keyword(s):  
Misorientation Angle ◽  
Growth Temperature ◽  
Diffusion Length ◽  
Vicinal Surface ◽  
Step Bunching ◽  
Terrace Width

AbstractWe investigate step bunching during SiGe growth on vicinal Si(111) surfaces. Step bunching occurs irrespective of the misorientation angle and direction of the vicinal surface, the growth temperature, and the Ge concentration. At 550°C, the average number of the steps in the bunch increases with the Ge concentration. After growth of 10-nm-thick SiGe layers, twodimensional islands are formed on the terraces, which indicates that the terrace width has already been saturated. Therefore, the terrace width is mainly determined by the diffusion length of the adatom. The average number of steps in the bunch increases with the Ge concentration because the diffusion length increases with the Ge concentration. The diffusion length also increases with the temperature. So the higher the temperature is, the larger the step bunch becomes.

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