scholarly journals Electric manipulation of the Mn-acceptor binding energy and the Mn-Mn exchange interaction on the GaAs (110) surface by nearby As vacancies

2015 ◽  
Vol 92 (4) ◽  
Author(s):  
M. R. Mahani ◽  
A. H. MacDonald ◽  
C. M. Canali
Keyword(s):  
Binding Energy ◽  
Exchange Interaction ◽  
Acceptor Binding Energy

Excitonic quasimolecules containing of two quantum dots

2016 ◽  
pp. 4024-4028 ◽  
Author(s):  
Sergey I. Pokutnyi ◽  
Wlodzimierz Salejda
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Exchange Interaction ◽  
Coulomb Interaction ◽  
Silicate Glass ◽  
Glass Matrix ◽  
Silicate Glass Matrix

The possibility of occurrence of the excitonic  quasimolecule formed of spatially separated electrons and holes in a nanosystem that consists  of  CuO quantum dots synthesized in a silicate glass matrix. It is shown that the major contribution to the excitonic quasimolecule binding energy is made by the energy of the exchange interaction of electrons with holes and this contribution is much more substantial than the contribution of the energy of Coulomb interaction between the electrons and holes.

scholarly journals Excitonic quasimolecules in nanosystems containing quantum dots

2016 ◽  
Vol 12 (2) ◽  
pp. 4018-4022
Author(s):  
Sergey I.Pokutnyi ◽  
Wlodzimierz Salejda
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Exchange Interaction ◽  
Coulomb Interaction ◽  
Silicate Glass ◽  
Glass Matrix ◽  
Silicate Glass Matrix

The possibility of occurrence of the excitonic  quasimolecule formed of spatially separated electrons and holes in a nanosystem that consists  of  CuO quantum dots synthesized in a silicate glass matrix. It is shown that the major contribution to the excitonic quasimolecule binding energy is made by the energy of the exchange interaction of electrons with holes and this contribution is much more substantial than the contribution of the energy of Coulomb interaction between the electrons and holes.

scholarly journals Beryllium acceptor binding energy in AlN

2008 ◽  
Vol 93 (14) ◽  
pp. 141104 ◽  
Author(s):  
A. Sedhain ◽  
T. M. Al Tahtamouni ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Binding Energy ◽  
Acceptor Binding Energy

scholarly journals Acceptor binding energy in δ-doped GaAs/AlAs multiple-quantum wells

2002 ◽  
Vol 92 (10) ◽  
pp. 6039-6042 ◽  
Author(s):  
W. M. Zheng ◽  
M. P. Halsall ◽  
P. Harmer ◽  
P. Harrison ◽  
M. J. Steer
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acceptor Binding Energy

Acceptor Binding Energy And Band Lineup Of III-V Nitride Alloys And Mocvd Growth Of GaN On GaAs - Or GaP-Coated Si

1994 ◽  
Vol 339 ◽  
Author(s):  
Yoshihiro Ueta ◽  
Shiro Sakai ◽  
Yasushi Kamiya ◽  
Hisao Sato
Keyword(s):  
Binding Energy ◽  
Bulk Modulus ◽  
Intermediate Layer ◽  
Group Iv ◽  
Si Substrate ◽  
Acceptor Impurity ◽  
Mocvd Growth ◽  
Nitride Alloys ◽  
Group Iv Elements ◽  
Acceptor Binding Energy

ABSTRACTThe acceptor binding energy is calculated to find out the best acceptor impurity in InN, GaN and AlN. Be is predicted to be the shallowest acceptor and the next are Mg and Zn. Group IV elements such as C or Si are very deep. Band lineup is calculated to be ΔEc : ΔEv = 2.1 eV : 0.76 eV = 0.73 : 0.27 = 2.8 : 1 for GaN/AlN and ΔEc : ΔEv = 0.88 eV : 0.66 eV = 0.57 : 0.43 = 1.3 : 1 for GaN/InN. GaN is grown on GaAs and GaP-coated Si substrate by MOCVD. GaAs intermediate layer gives better GaN compared to GaP intermediate layer. It is suggested that the lower bulk modulus of GaAs than that of GaP gives this difference.

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