scholarly journals Weak localization and spin-orbit interaction in side-gate field effect devices at theLaAlO3/SrTiO3interface

2014 ◽  
Vol 90 (23) ◽  
Author(s):  
D. Stornaiuolo ◽  
S. Gariglio ◽  
A. Fête ◽  
M. Gabay ◽  
D. Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Weak Localization ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Field Effect Devices

scholarly journals Weak localization of bismuth cluster-decorated graphene and its spin–orbit interaction

2017 ◽  
Vol 12 (4) ◽  
Author(s):  
Jian-Lei Ge ◽  
Tian-Ru Wu ◽  
Ming Gao ◽  
Zhan-Bin Bai ◽  
Lu Cao ◽  
...  
Keyword(s):  
Weak Localization ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Bismuth Cluster

Weak localization and spin-orbit interaction in self-organized In0.2Ga0.8As quantum wires on GaAs (221)A substrates

2005 ◽  
Vol 2 (8) ◽  
pp. 3072-3076
Author(s):  
S. Ishida ◽  
K. Takeda ◽  
H. Tokumon ◽  
S. Shimomura ◽  
S. Hiyamizu
Keyword(s):  
Quantum Wires ◽  
Weak Localization ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Self Organized

2D ANOMALOUS MAGNETORESISTANCE IN THE PRESENCE OF SPIN–ORBIT SCATTERING

2007 ◽  
Vol 06 (03n04) ◽  
pp. 187-189
Author(s):  
NIKITA S. AVERKIEV ◽  
KONSTANTIN S. ROMANOV
Keyword(s):  
Magnetic Fields ◽  
Spin Relaxation ◽  
Diffusion Approximation ◽  
Weak Localization ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Semiconductor Structures ◽  
Weak Magnetic Fields

The model of weak localization in 2D semiconductor structures in the whole range of classically weak magnetic fields in the presence of the Elliot–Yafet spin relaxation has been developed. It was shown that the spin–orbit interaction influences the value of magnetoresistance in small magnetic fields (within diffusion approximation) and when diffusion approximation is no longer valid.

Sign in / Sign up

Export Citation Format

Share Document