scholarly journals Z3symmetry-protected topological phases in the SU(3) AKLT model

2014 ◽  
Vol 90 (23) ◽  
Author(s):  
Takahiro Morimoto ◽  
Hiroshi Ueda ◽  
Tsutomu Momoi ◽  
Akira Furusaki
10.33540/70 ◽  
2020 ◽  
Author(s):  
◽  
Sander Hein Kooi
Keyword(s):  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuan Da Liao ◽  
Jian Kang ◽  
Clara N. Breiø ◽  
Xiao Yan Xu ◽  
Han-Qing Wu ◽  
...  

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Matheus I. N. Rosa ◽  
Massimo Ruzzene ◽  
Emil Prodan

AbstractTwisted bilayered systems such as bilayered graphene exhibit remarkable properties such as superconductivity at magic angles and topological insulating phases. For generic twist angles, the bilayers are truly quasiperiodic, a fact that is often overlooked and that has consequences which are largely unexplored. Herein, we uncover that twisted n-layers host intrinsic higher dimensional topological phases, and that those characterized by second Chern numbers can be found in twisted bi-layers. We employ phononic lattices with interactions modulated by a second twisted lattice and reveal Hofstadter-like spectral butterflies in terms of the twist angle, which acts as a pseudo magnetic field. The phason provided by the sliding of the layers lives on 2n-tori and can be used to access and manipulate the edge states. Our work demonstrates how multi-layered systems are virtual laboratories for studying the physics of higher dimensional quantum Hall effect, and can be employed to engineer topological pumps via simple twisting and sliding.


Author(s):  
Stephen Piddock ◽  
Ashley Montanaro

AbstractA family of quantum Hamiltonians is said to be universal if any other finite-dimensional Hamiltonian can be approximately encoded within the low-energy space of a Hamiltonian from that family. If the encoding is efficient, universal families of Hamiltonians can be used as universal analogue quantum simulators and universal quantum computers, and the problem of approximately determining the ground-state energy of a Hamiltonian from a universal family is QMA-complete. One natural way to categorise Hamiltonians into families is in terms of the interactions they are built from. Here we prove universality of some important classes of interactions on qudits (d-level systems): We completely characterise the k-qudit interactions which are universal, if augmented with arbitrary Hermitian 1-local terms. We find that, for all $$k \geqslant 2$$ k ⩾ 2 and all local dimensions $$d \geqslant 2$$ d ⩾ 2 , almost all such interactions are universal aside from a simple stoquastic class. We prove universality of generalisations of the Heisenberg model that are ubiquitous in condensed-matter physics, even if free 1-local terms are not provided. We show that the SU(d) and SU(2) Heisenberg interactions are universal for all local dimensions $$d \geqslant 2$$ d ⩾ 2 (spin $$\geqslant 1/2$$ ⩾ 1 / 2 ), implying that a quantum variant of the Max-d-Cut problem is QMA-complete. We also show that for $$d=3$$ d = 3 all bilinear-biquadratic Heisenberg interactions are universal. One example is the general AKLT model. We prove universality of any interaction proportional to the projector onto a pure entangled state.


2020 ◽  
Author(s):  
Xinyang Li ◽  
Weixiao Ji ◽  
Peiji Wang ◽  
Chang-wen Zhang

Half-Dirac semimetals (HDSs), which possess 100% spin-polarizations for Dirac materials, are highly desirable for exploring various topological phases of matter, as low-dimensionality opens unprecedented opportunities for manipulating the quantum state...


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
He Gao ◽  
Haoran Xue ◽  
Zhongming Gu ◽  
Tuo Liu ◽  
Jie Zhu ◽  
...  

AbstractTopological phases of matter are classified based on their Hermitian Hamiltonians, whose real-valued dispersions together with orthogonal eigenstates form nontrivial topology. In the recently discovered higher-order topological insulators (TIs), the bulk topology can even exhibit hierarchical features, leading to topological corner states, as demonstrated in many photonic and acoustic artificial materials. Naturally, the intrinsic loss in these artificial materials has been omitted in the topology definition, due to its non-Hermitian nature; in practice, the presence of loss is generally considered harmful to the topological corner states. Here, we report the experimental realization of a higher-order TI in an acoustic crystal, whose nontrivial topology is induced by deliberately introduced losses. With local acoustic measurements, we identify a topological bulk bandgap that is populated with gapped edge states and in-gap corner states, as the hallmark signatures of hierarchical higher-order topology. Our work establishes the non-Hermitian route to higher-order topology, and paves the way to exploring various exotic non-Hermiticity-induced topological phases.


2020 ◽  
Vol 2 (2) ◽  
Author(s):  
Manisha Thakurathi ◽  
Denis Chevallier ◽  
Daniel Loss ◽  
Jelena Klinovaja

2021 ◽  
Vol 126 (24) ◽  
Author(s):  
Shuchun Huan ◽  
Shihao Zhang ◽  
Zhicheng Jiang ◽  
Hao Su ◽  
Hongyuan Wang ◽  
...  

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Matthew J. Gilbert

AbstractWithin the broad and deep field of topological materials, there are an ever-increasing number of materials that harbor topological phases. While condensed matter physics continues to probe the exotic physical properties resulting from the existence of topological phases in new materials, there exists a suite of “well-known” topological materials in which the physical properties are well-characterized, such as Bi2Se3 and Bi2Te3. In this context, it is then appropriate to ask if the unique properties of well-explored topological materials may have a role to play in applications that form the basis of a new paradigm in information processing devices and architectures. To accomplish such a transition from physical novelty to application based material, the potential of topological materials must be disseminated beyond the reach of condensed matter to engender interest in diverse areas such as: electrical engineering, materials science, and applied physics. Accordingly, in this review, we assess the state of current electronic device applications and contemplate the future prospects of topological materials from an applied perspective. More specifically, we will review the application of topological materials to the general areas of electronic and magnetic device technologies with the goal of elucidating the potential utility of well-characterized topological materials in future information processing applications.


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