scholarly journals Calculation of strain effects on vacancy-mediated diffusion of impurities in fcc structures: General approach and application toNi1−xSix

2014 ◽  
Vol 90 (18) ◽  
Author(s):  
Thomas Garnier ◽  
Zebo Li ◽  
Maylise Nastar ◽  
Pascal Bellon ◽  
Dallas R. Trinkle
Author(s):  
T.S. Savage ◽  
R. Ai ◽  
D. Dunn ◽  
L.D. Marks

The use of lasers for surface annealing, heating and/or damage has become a routine practice in the study of materials. Lasers have been closely looked at as an annealing technique for silicon and other semiconductors. They allow for local heating from a beam which can be focused and tuned to different wavelengths for specific tasks. Pulsed dye lasers allow for short, quick bursts which can allow the sample to be rapidly heated and quenched. This short, rapid heating period may be important for cases where diffusion of impurities or dopants may not be desirable.At Northwestern University, a Candela SLL - 250 pulsed dye laser, with a maximum power of 1 Joule/pulse over 350 - 400 nanoseconds, has been set up in conjunction with a Hitachi UHV-H9000 transmission electron microscope. The laser beam is introduced into the surface science chamber through a series of mirrors, a focusing lens and a six inch quartz window.


2019 ◽  
Vol 2 (2) ◽  
pp. 1210-1220 ◽  
Author(s):  
Sun Jae Kim ◽  
Taner Akbay ◽  
Junko Matsuda ◽  
Atsushi Takagaki ◽  
Tatsumi Ishihara

2017 ◽  
Vol 1 (2) ◽  
Author(s):  
R. S. Alencar ◽  
K. D. A. Saboia ◽  
D. Machon ◽  
G. Montagnac ◽  
V. Meunier ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Toshifumi Imajo ◽  
Takashi Suemasu ◽  
Kaoru Toko

AbstractPolycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by modulating the substrate material. The strain of the Ge layers is in the range of approximately 0.5% (tensile) to -0.5% (compressive), which reflects both thermal expansion difference between Ge and substrate and phase transition of Ge from amorphous to crystalline. For both tensile and compressive strains, a large strain provides large crystal grains with sizes of approximately 10 μm owing to growth promotion. The potential barrier height of the grain boundary strongly depends on the strain and its direction. It is increased by tensile strain and decreased by compressive strain. These findings will be useful for the design of Ge-based thin-film devices on various materials for Internet-of-things technologies.


2021 ◽  
pp. 2007862
Author(s):  
Chia‐Tse Tai ◽  
Po‐Yuan Chiu ◽  
Chia‐You Liu ◽  
Hsiang‐Shun Kao ◽  
C. Thomas Harris ◽  
...  

Author(s):  
Maria C. Garcia Toro ◽  
Miguel L. Crespillo ◽  
Jose Olivares ◽  
Joseph T. Graham

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