scholarly journals Interaction effects in nonequilibrium transport properties of a four-terminal topological corner junction

2014 ◽  
Vol 90 (15) ◽  
Author(s):  
F. Romeo ◽  
R. Citro
Keyword(s):  
Transport Properties ◽  
Interaction Effects ◽  
Nonequilibrium Transport

scholarly journals Nonequilibrium transport properties for a three-site quantum wire model

2008 ◽  
Vol 5 (1) ◽  
pp. 56-60
Author(s):  
Yangdong Zheng ◽  
Hiroshi Mizuta ◽  
Shunri Oda
Keyword(s):  
Transport Properties ◽  
Quantum Wire ◽  
Nonequilibrium Transport

Equilibrium and nonequilibrium dynamics of soft sphere fluids

Soft Matter ◽  
2015 ◽  
Vol 11 (26) ◽  
pp. 5274-5281 ◽  
Author(s):  
Yajun Ding ◽  
Jeetain Mittal
Keyword(s):  
Transport Properties ◽  
Structural Properties ◽  
Computer Simulations ◽  
Nonequilibrium Dynamics ◽  
Systematic Evaluation ◽  
Nonequilibrium Transport ◽  
Soft Sphere

We use computer simulations to provide a systematic evaluation of the role of particle softness in equilibrium and nonequilibrium transport properties and their underlying connection with thermodynamic and structural properties.

scholarly journals Interaction effects and transport properties of Pt capped Co nanoparticles

2013 ◽  
Vol 113 (4) ◽  
pp. 043917 ◽  
Author(s):  
A. Ludwig ◽  
L. Agudo ◽  
G. Eggeler ◽  
A. Ludwig ◽  
A. D. Wieck ◽  
...  
Keyword(s):  
Transport Properties ◽  
Interaction Effects ◽  
Co Nanoparticles

Spectroscopic Diagnostics of Tokamaks

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis
Keyword(s):  
Transport Properties ◽  
Power Losses ◽  
Spectroscopic Diagnostics ◽  
Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

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