High-field mobility in anthracene crystals

1974 ◽  
Vol 9 (6) ◽  
pp. 2743-2745 ◽  
Author(s):  
R. G. Kepler ◽  
D. C. Hoesterey
Keyword(s):  
High Field ◽  
Field Mobility

High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

2011 ◽  
Vol 55 (1) ◽  
pp. 64-67 ◽  
Author(s):  
W.B. Chen ◽  
C.H. Cheng ◽  
C.W. Lin ◽  
P.C. Chen ◽  
Albert Chin
Keyword(s):  
High Field ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Metal Gate ◽  
Field Mobility

High Field Electron Drift in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer
Keyword(s):  
Electric Fields ◽  
High Field ◽  
Drift Mobility ◽  
Time Range ◽  
Electron Drift ◽  
Parameter Change ◽  
Transient Photocurrent ◽  
Field Mobility ◽  
High Electric Fields ◽  
Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO/sub 2/ universal mobility with an EOT=/spl sim/1 nm

2006 ◽  
Vol 27 (3) ◽  
pp. 185-187 ◽  
Author(s):  
Zhibo Zhang ◽  
S.C. Song ◽  
M.A. Quevedo-Lopez ◽  
Kisik Choi ◽  
P. Kirsch ◽  
...  
Keyword(s):  
High Field ◽  
Metal Gate ◽  
High K ◽  
Field Mobility

New insight into high-field mobility enhancement of nitrided-oxide N-MOSFET's based on noise measurement

1994 ◽  
Vol 41 (11) ◽  
pp. 2205-2209 ◽  
Author(s):  
Z.J. Ma ◽  
Z.H. Liu ◽  
Yiu Chung Cheng ◽  
P.K. Ko ◽  
Chenming Hu
Keyword(s):  
High Field ◽  
Noise Measurement ◽  
Field Mobility ◽  
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