High‐field mobility of light holes in strained quantum wells

1989 ◽  
Vol 54 (22) ◽  
pp. 2215-2217 ◽  
Author(s):  
Harold P. Hjalmarson
Keyword(s):  
Quantum Wells ◽  
High Field ◽  
Strained Quantum Wells ◽  
Field Mobility

High-field mobility of light holes in strained InGaAs quantum wells

1989 ◽  
Vol 32 (12) ◽  
pp. 1777-1780 ◽  
Author(s):  
Harold P. Hjalmarson ◽  
I.J. Fritz ◽  
L.R. Dawson
Keyword(s):  
Quantum Wells ◽  
High Field ◽  
Field Mobility

High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

2011 ◽  
Vol 55 (1) ◽  
pp. 64-67 ◽  
Author(s):  
W.B. Chen ◽  
C.H. Cheng ◽  
C.W. Lin ◽  
P.C. Chen ◽  
Albert Chin
Keyword(s):  
High Field ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Metal Gate ◽  
Field Mobility

High Field Electron Drift in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer
Keyword(s):  
Electric Fields ◽  
High Field ◽  
Drift Mobility ◽  
Time Range ◽  
Electron Drift ◽  
Parameter Change ◽  
Transient Photocurrent ◽  
Field Mobility ◽  
High Electric Fields ◽  
Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO/sub 2/ universal mobility with an EOT=/spl sim/1 nm

2006 ◽  
Vol 27 (3) ◽  
pp. 185-187 ◽  
Author(s):  
Zhibo Zhang ◽  
S.C. Song ◽  
M.A. Quevedo-Lopez ◽  
Kisik Choi ◽  
P. Kirsch ◽  
...  
Keyword(s):  
High Field ◽  
Metal Gate ◽  
High K ◽  
Field Mobility

High-field hole transport in strained InxGa1-xAs/GaAs modulation-doped quantum wells

1990 ◽  
Vol 5 (6) ◽  
pp. 628-630 ◽  
Author(s):  
M Reddy ◽  
R Grey ◽  
P A Claxton ◽  
J Woodhead
Keyword(s):  
Quantum Wells ◽  
High Field ◽  
Hole Transport

InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5–1.9 µm)

1999 ◽  
Vol 33 (9) ◽  
pp. 1007-1009
Author(s):  
Z. N. Sokolova ◽  
D. A. Vinokurov ◽  
I. S. Tarasov ◽  
N. A. Gun’ko ◽  
G. G. Zegrya
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Strained Quantum Wells
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