scholarly journals Relaxation dynamics of photoexcited charge carriers at the Bi(111) surface

2014 ◽  
Vol 89 (11) ◽  
Author(s):  
Christopher Bronner ◽  
Petra Tegeder
2004 ◽  
Vol 387 (1-3) ◽  
pp. 176-181 ◽  
Author(s):  
Christophe Bauer ◽  
Gerrit Boschloo ◽  
Emad Mukhtar ◽  
Anders Hagfeldt

2016 ◽  
Vol 18 (7) ◽  
pp. 5219-5231 ◽  
Author(s):  
Mohamed El-Amine Madjet ◽  
Alexey V. Akimov ◽  
Fadwa El-Mellouhi ◽  
Golibjon R. Berdiyorov ◽  
Sahel Ashhab ◽  
...  

Non-adiabatic molecular dynamics simulations of non-radiative relaxation dynamics of charge carriers in hybrid perovskites show that the carrier relaxation time can be considerably increased by halide mixing.


2020 ◽  
Vol 11 (12) ◽  
pp. 4901-4910
Author(s):  
William M. Sanderson ◽  
Fudong Wang ◽  
Joshua Schrier ◽  
William E. Buhro ◽  
Richard A. Loomis

Nanophotonics ◽  
2015 ◽  
Vol 4 (3) ◽  
pp. 224-249 ◽  
Author(s):  
Florian Wendler ◽  
Andreas Knorr ◽  
Ermin Malic

AbstractIn an external magnetic field, the energy of massless charge carriers in graphene is quantized into non-equidistant degenerate Landau levels including a zero-energy level. This extraordinary electronic dispersion gives rise to a fundamentally new dynamics of optically excited carriers. Here, we review the state of the art of the relaxation dynamics in Landau-quantized graphene focusing on microscopic insights into possible many-particle relaxation channels.We investigate optical excitation into a non equilibrium distribution followed by ultrafast carrier- carrier and carrier-phonon scattering processes. We reveal that surprisingly the Auger scattering dominates the relaxation dynamics in spite of the non-equidistant Landau quantization in graphene. Furthermore, we demonstrate how technologically relevant carrier multiplication can be achieved and discuss the possibility of optical gain in Landau-quantized graphene. The provided microscopic view on elementary many-particle processes can guide future experimental studies aiming at the design of novel graphene-based optoelectronic devices, such as highly efficient photodetectors, solar cells, and spectrally broad Landau level lasers.


Author(s):  
Klaus-Ruediger Peters

Environmental SEM operate at specimen chamber pressures of ∼20 torr (2.7 kPa) allowing stabilization of liquid water at room temperature, working on rugged insulators, and generation of an environmental secondary electron (ESE) signal. All signals available in conventional high vacuum instruments are also utilized in the environmental SEM, including BSE, SE, absorbed current, CL, and X-ray. In addition, the ESEM allows utilization of the flux of charge carriers as information, providing exciting new signal modes not available to BSE imaging or to conventional high vacuum SEM.In the ESEM, at low vacuum, SE electrons are collected with a “gaseous detector”. This detector collects low energy electrons (and ions) with biased wires or plates similar to those used in early high vacuum SEM for SE detection. The detector electrode can be integrated into the first PLA or positioned at any other place resulting in a versatile system that provides a variety of surface information.


Author(s):  
Yimei Zhu ◽  
J. Tafto

The electron holes confined to the CuO2-plane are the charge carriers in high-temperature superconductors, and thus, the distribution of charge plays a key role in determining their superconducting properties. While it has been known for a long time that in principle, electron diffraction at low angles is very sensitive to charge transfer, we, for the first time, show that under a proper TEM imaging condition, it is possible to directly image charge in crystals with a large unit cell. We apply this new way of studying charge distribution to the technologically important Bi2Sr2Ca1Cu2O8+δ superconductors.Charged particles interact with the electrostatic potential, and thus, for small scattering angles, the incident particle sees a nuclei that is screened by the electron cloud. Hence, the scattering amplitude mainly is determined by the net charge of the ion. Comparing with the high Z neutral Bi atom, we note that the scattering amplitude of the hole or an electron is larger at small scattering angles. This is in stark contrast to the displacements which contribute negligibly to the electron diffraction pattern at small angles because of the short g-vectors.


2000 ◽  
Vol 10 (PR7) ◽  
pp. Pr7-227-Pr7-232 ◽  
Author(s):  
B. Jérôme ◽  
E. Cecchetto ◽  
N. R. de Souza ◽  
A. L. Demirel
Keyword(s):  

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