Observation of lock-in phenomena in heavy-ion-irradiated single crystal ofBa(Fe0.93Co0.07)2As2

2014 ◽  
Vol 89 (2) ◽  
Author(s):  
Toshihiro Taen ◽  
Hidenori Yagyuda ◽  
Yasuyuki Nakajima ◽  
Tsuyoshi Tamegai ◽  
Oscar Ayala-Valenzuela ◽  
...  
Keyword(s):  
1999 ◽  
Vol 5 (S2) ◽  
pp. 758-759
Author(s):  
W.L. Zhou ◽  
Y. Sasaki ◽  
Y. Ikuhara ◽  
C.J.O’Connor

Artificial defects generated by ion irradiation have been considered an efficient method to enhance the critical current density in superconducting materials. The mechanism of producing defects as flux pining centers is still an important issue since the efficiency of irradiation-induced defects in flux pinning strongly depends on their microstructures. Different types of defects have been found in heavy ion irradiation. However, there are few results that show light ion irradiation due to the target material selected, the type of light ion and energy, and the incident ion angle. Another factor is the difficulty of cross-sectional sample preparation. In this paper, a single crystal Bi2Sr2CaCu2O7-x with 11 MeV B5+ ion irradiation was observed by transmission electron microscope (TEM) from both plan and cross-sectional view.The Bi2Sr2CaCu2O7-x single crystals used for ion irradiation were prepared using the floating-zone melting method. The crystals were cleaved into thin sheets of about 20 μm thickness along the a-b plane and cut to about 2mmx2mm size.


2003 ◽  
Vol 797 ◽  
Author(s):  
Koichi Awazu ◽  
Makoto Fujimaki ◽  
Yoshimichi Ohki ◽  
Tetsuro Komatsubara

ABSTRACTWe have developed a nano-micro structure fabrication method in rutile TiO2 single crystal by use of swift heavy-ion irradiation. The area where ions heavier than Cl ion accelerated with MeV-order high energy were irradiated was well etched by hydrofluoric acid, by comparison etching was not observed in the pristine TiO2 single crystal. Noticed that the irradiated area could be etched to a depth at which the electronic stopping power of the ion decayed to a value of 6.2keV/nm. We also found that the value of the electronic stopping power was increased, eventually decreased against depth in TiO2 single crystal with, e.g. 84.5MeV Ca ion. Using such a beam, inside of TiO2 single crystal was selectively etched with 20% hydrofluoric acid, while the top surface of TiO2 single crystal subjected to irradiation was not etched. Roughness of the new surface created in the single crystal was within 7nm with the atomic forth microscopy measurement.


1996 ◽  
Vol 46 (S3) ◽  
pp. 1555-1556 ◽  
Author(s):  
G. Tatara ◽  
M. Matsuda ◽  
K. Katsumata ◽  
T. Kambara ◽  
Y. Awaya ◽  
...  

2007 ◽  
Vol 1039 ◽  
Author(s):  
John Morse ◽  
Murielle Salomé ◽  
Eleni Berdermann ◽  
Michal Pomorski ◽  
James Grant ◽  
...  

AbstractUltrapure, homoeptaxially grown CVD single crystal diamond is a material with great potential for the fabrication of ionizing radiation detectors for high energy, heavy ion physics, and realtime dosimetry for radiotherapy. Only diamond has suitable transmission properties and can offer the required radiation hardness for synchrotron X-ray beam monitoring applications. We report on experiments made using a synchrotron X-ray microbeam probe to investigate the performance of single crystal diamonds operated as position sensitive, solid state ‘ionization chambers’. We show that for a wide range of electric fields >0.3Vµm−1, suitably prepared devices give excellent spatial response uniformity and time stability. With an applied field of 2Vµm−1 complete charge collection times are ∼1nsec for a diamond plate thickness of 100µm. Position sensitivity was obtained for an X-ray beam incident on the isolation gap between adjacent electrodes of a quadrant device: here, a crossover response region that results from charge carrier diffusion extends over ∼20µm. Using GHz bandwidth signal processing electronics, the signal charge collection process was measured with spatial and temporal resolutions of 1µm and <50ps.


Author(s):  
Berthold Stöger ◽  
Matthias Weil ◽  
Michal Dušek

Zn2P2O7crystallizes in a thortveitite-like structure and features temperature-dependent polymorphism. At high temperatures (T> 500 K), the aristotype phase β-Zn2P2O7(C2/m,Z= 2,a≃ 6.60,b≃ 8.28,c≃ 4.53 Å, β ≃ 105.4°) is stable. At lower temperatures the lock-in phase α1-Zn2P2O7[at 350 K:I2/c,Z= 12,a= 20.1131 (13),b= 8.2769 (6),c= 9.109 (3) Å, β = 106.338 (16)°], a sixfold superstructure with commensurate modulation vectorq= (1/3, 0, 1/2), is stable. Between the stability ranges of the α1- and β-phases exists the intermediate, incommensurately modulated α2-Zn2P2O7phase with modulation wavevectorq≃ (0.33, 0, 0.40) andC2/m(α, 0, γ)0ssuperspace group symmetry. The α1→ α2lock-in phase transition atTL= 408 K is of first-order and features virtually no hysteresis. It is immediately followed by the second-order α2→ β transition to the non-modulated phase atTI≃ 430 K. This transformation is sluggish and even atT= 500 K very weak satellite reflections of the α2-phase were observed. Both phase transitions were analyzed with differential scanning calorimetry and high-temperature powder and single-crystal X-ray diffraction. The crystal structures of the α1- and α2-phases were refined from single crystal data collected atT= 350, 400, 405, 410, 415, 420, 425, 430, 450 and 500 K. Different models describing the slow transition from the incommensurately modulated α2- to the non-modulated β-phase were tested. In the model resulting in the best residuals, the bridging O atom of the [P2O7] group, which is located on a 2/mposition in the basic structure, is described as an overlap of an atom ordered in internal space and one atom disordered around the mirror plane. The occupancy of the ordered atom decreases with temperature until atT= 500 K virtually only the disordered atom remains. Simultaneously, the amplitude of the modulation functions of the remaining atoms decreases, so that theT= 500 K structure can be considered as theC2/maristotype structure, although the diffraction pattern still features satellite reflections of first order with very low intensities.


2016 ◽  
Vol 69 ◽  
pp. 1-7 ◽  
Author(s):  
G. García ◽  
I. Preda ◽  
M. Díaz-Híjar ◽  
V. Tormo-Márquez ◽  
O. Peña-Rodríguez ◽  
...  

2006 ◽  
Author(s):  
J. Mirkovic ◽  
K. Murata ◽  
A. Nakano ◽  
T. Yamamoto ◽  
I. Kakeya ◽  
...  
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