Bose-glass transition in heavy-ion irradiated La1.85Sr0.15CuO4 single crystal

1996 ◽  
Vol 46 (S3) ◽  
pp. 1555-1556 ◽  
Author(s):  
G. Tatara ◽  
M. Matsuda ◽  
K. Katsumata ◽  
T. Kambara ◽  
Y. Awaya ◽  
...  
Keyword(s):  
Glass Transition ◽  
Single Crystal ◽  
Heavy Ion ◽  
Bose Glass

Bose-glass transition in Ag/BSCCO-2223 irradiated tapes

2004 ◽  
Vol 408-410 ◽  
pp. 32-33 ◽  
Author(s):  
D. Botta ◽  
A. Chiodoni ◽  
R. Gerbaldo ◽  
G. Ghigo ◽  
L. Gozzelino ◽  
...  
Keyword(s):  
Glass Transition ◽  
Bose Glass

Reverse Plasticity in Nanoindentation

2007 ◽  
Vol 1049 ◽  
Author(s):  
Yongjiang Huang ◽  
Nursiani Indah Tjahyono ◽  
Jun Shen ◽  
Yu Lung Chiu
Keyword(s):  
Mechanical Properties ◽  
Plastic Deformation ◽  
Glass Transition ◽  
Single Crystal ◽  
Metallic Glasses ◽  
Deformation Mechanisms ◽  
Glass Transition Temperatures ◽  
Loading Rates ◽  
Nanoindentation Experiment ◽  
Properties Of Materials

AbstractThis paper summarises our recent cyclic nanoindentation experiment studies on a range of materials including single crystal and nanocrystalline copper, single crystal aluminium and bulk metallic glasses with different glass transition temperatures. The unloading and reloading processes of the nanoindentation curves have been analysed. The reverse plasticity will be discussed in the context of plastic deformation mechanisms involved. The effect of loading rates on the mechanical properties of materials upon cyclic loading will also be discussed.

Transmission Electron Microscopy Observation of 11MEV B5+ Ion Irradiation in Bi2Sr2CaCu2O7-x Single Crystal

1999 ◽  
Vol 5 (S2) ◽  
pp. 758-759
Author(s):  
W.L. Zhou ◽  
Y. Sasaki ◽  
Y. Ikuhara ◽  
C.J.O’Connor
Keyword(s):  
Single Crystal ◽  
Ion Irradiation ◽  
Target Material ◽  
Heavy Ion ◽  
Zone Melting ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Different Types ◽  
Induced Defects ◽  
Irradiation Induced Defects

Artificial defects generated by ion irradiation have been considered an efficient method to enhance the critical current density in superconducting materials. The mechanism of producing defects as flux pining centers is still an important issue since the efficiency of irradiation-induced defects in flux pinning strongly depends on their microstructures. Different types of defects have been found in heavy ion irradiation. However, there are few results that show light ion irradiation due to the target material selected, the type of light ion and energy, and the incident ion angle. Another factor is the difficulty of cross-sectional sample preparation. In this paper, a single crystal Bi2Sr2CaCu2O7-x with 11 MeV B5+ ion irradiation was observed by transmission electron microscope (TEM) from both plan and cross-sectional view.The Bi2Sr2CaCu2O7-x single crystals used for ion irradiation were prepared using the floating-zone melting method. The crystals were cleaved into thin sheets of about 20 μm thickness along the a-b plane and cut to about 2mmx2mm size.

Martensite and spin-glass transition of a Cu-Zn-Al-Fe shape memory alloy single crystal

1994 ◽  
Author(s):  
Pyoung-Kil Yoo ◽  
G.-S. Ieen ◽  
Hyo-Yeol Park ◽  
Seok-Kil Han ◽  
Min-Su Jang
Keyword(s):  
Glass Transition ◽  
Shape Memory Alloy ◽  
Single Crystal ◽  
Shape Memory ◽  
Spin Glass ◽  
Alloy Single Crystal ◽  
Spin Glass Transition

Observation of lock-in phenomena in heavy-ion-irradiated single crystal ofBa(Fe0.93Co0.07)2As2

2014 ◽  
Vol 89 (2) ◽  
Author(s):  
Toshihiro Taen ◽  
Hidenori Yagyuda ◽  
Yasuyuki Nakajima ◽  
Tsuyoshi Tamegai ◽  
Oscar Ayala-Valenzuela ◽  
...  
Keyword(s):  
Single Crystal ◽  
Heavy Ion ◽  
Lock In

Three-Dimensional Lithography for Rutile TiO2 Single Crystals using Swift Heavy Ions

2003 ◽  
Vol 797 ◽  
Author(s):  
Koichi Awazu ◽  
Makoto Fujimaki ◽  
Yoshimichi Ohki ◽  
Tetsuro Komatsubara
Keyword(s):  
Single Crystal ◽  
Hydrofluoric Acid ◽  
Ion Irradiation ◽  
Three Dimensional ◽  
Heavy Ion ◽  
High Energy ◽  
Stopping Power ◽  
A Value ◽  
Microscopy Measurement ◽  
Electronic Stopping Power

ABSTRACTWe have developed a nano-micro structure fabrication method in rutile TiO2 single crystal by use of swift heavy-ion irradiation. The area where ions heavier than Cl ion accelerated with MeV-order high energy were irradiated was well etched by hydrofluoric acid, by comparison etching was not observed in the pristine TiO2 single crystal. Noticed that the irradiated area could be etched to a depth at which the electronic stopping power of the ion decayed to a value of 6.2keV/nm. We also found that the value of the electronic stopping power was increased, eventually decreased against depth in TiO2 single crystal with, e.g. 84.5MeV Ca ion. Using such a beam, inside of TiO2 single crystal was selectively etched with 20% hydrofluoric acid, while the top surface of TiO2 single crystal subjected to irradiation was not etched. Roughness of the new surface created in the single crystal was within 7nm with the atomic forth microscopy measurement.

Sign in / Sign up

Export Citation Format

Share Document