Localization of charge carriers in the normal state of underdoped Bi2+xSr2−xCuO6+δ

2014 ◽  
Vol 89 (2) ◽  
Author(s):  
Huiqian Luo ◽  
Hai-Hu Wen
Keyword(s):  
Normal State ◽  
Charge Carriers ◽  
Localization Of Charge Carriers

Localization of charge carriers by Pr in theTl2Ba2Ca1−xPrxCu2Oysystem

2002 ◽  
Vol 66 (21) ◽  
Author(s):  
S. N. Bhatia ◽  
P. Chowdhury ◽  
S. Gupta ◽  
B. D. Padalia
Keyword(s):  
Charge Carriers ◽  
Localization Of Charge Carriers

New mechanisms of localization of charge carriers in nanosilicon

2004 ◽  
Vol 46 (1) ◽  
pp. 45-48
Author(s):  
I. V. Blonskyy ◽  
A. Yu. Vakhnin ◽  
V. N. Kadan ◽  
A. K. Kadashchuk
Keyword(s):  
Charge Carriers ◽  
Localization Of Charge Carriers

Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies

2012 ◽  
Vol 46 (8) ◽  
pp. 998-1002 ◽  
Author(s):  
E. A. Shevchenko ◽  
V. N. Jmerik ◽  
A. M. Mizerov ◽  
A. A. Sitnikova ◽  
S. V. Ivanov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Charge Carriers ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Localization Of Charge Carriers

Out-of-Plane and in-Plane Conduction in Insulating and Strongly Underdoped Cuprates

1998 ◽  
Vol 12 (29n31) ◽  
pp. 3203-3206
Author(s):  
C. C. Almasan ◽  
G. A. Levin ◽  
E. Cimpoiasu ◽  
T. Stein ◽  
D. A. Gajewski ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Normal State ◽  
Low Temperatures ◽  
Elementary Step ◽  
Charge Carriers ◽  
Two Dimensional ◽  
Out Of Plane ◽  
Underdoped Cuprates

We report measurements of out-of-plane (ρ c ) and in-plane (ρab) normal-state resistivities of single crystals of insulating PrBa2Cu3O 7-δ and strongly underdoped oxygen deficient YBa2Cu3O 6.41 using a flux transformer method. In the superconducting specimens, the onset of superconductivity was suppressed by a magnetic field of 9 T. We have found that the anisotropy ρc/ρab of these samples increases monotonically at low temperatures with no signs of saturation. The temperature dependence of ρc/ρab for YBa2Cu3O6.41 is well described by ρc/ρab=a +bT-2/3, but over a smaller temperature range than for insulating PrBa2Cu3O 7-δ. Both the absence of saturation of ρc/ρab and its T-2/3 dependence indicate two-dimensional conduction. This means that the average in-plane hopping distance of the localized charge carriers increases with decreasing T according to Mott's [Formula: see text] law, while the elementary step in the c-direction remains T independent, equal to the spacing between the bilayers.

scholarly journals Localization of charge carriers in layered crystals MexTiSe2 (Me = Cr, Mn, Cu) studied by the resonant photoemission

2013 ◽  
Vol 114 (13) ◽  
pp. 133704 ◽  
Author(s):  
Y. M. Yarmoshenko ◽  
A. S. Shkvarin ◽  
M. V. Yablonskikh ◽  
A. I. Merentsov ◽  
A. N. Titov
Keyword(s):  
Charge Carriers ◽  
Resonant Photoemission ◽  
Layered Crystals ◽  
Localization Of Charge Carriers

Bulk photovoltaic effect in ferroelectrics and the localization of charge carriers

1980 ◽  
Vol 29 (1) ◽  
pp. 41-42 ◽  
Author(s):  
E. V. Bursian ◽  
Ya. G. Girshberg ◽  
N. N. Trunov
Keyword(s):  
Photovoltaic Effect ◽  
Charge Carriers ◽  
Localization Of Charge Carriers

Influence of Mn Site Substitution on Electrical Resistivity and Magnetoresistance Properties of Rare Earth Manganite

2014 ◽  
Vol 1047 ◽  
pp. 123-129 ◽  
Author(s):  
Tejas M. Tank ◽  
D. Bhargava ◽  
V. Sridharan ◽  
S.S. Samatham ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Charge Carriers ◽  
Variable Range Hopping ◽  
Density Of State ◽  
Spin Dependent Scattering ◽  
Hopping Model ◽  
Variable Range Hopping Model ◽  
Sn Substitution ◽  
Localization Of Charge Carriers

We investigate the effects of Cr, Ru and Sn substitution on electrical resistivity and magnetoresistance property of polycrystalline samples La0.67Sr0.33Mn1-xBxO3(x = 0, 0.05; B= Ru, Cr and Sn) compounds. The value of M-I transition temperature (TP) decreases while resistivity increases with Cr, Ru and Sn substitution, moreover, the largest low-temperature magnetoresistance (MR %) is found at magnetic field dependent (Isotherm), which suggest that the spin-dependent scattering from internal grain regions is also responsible for the low-temperature MR %. Resistivity data have been fitted with the variable range hopping model to estimate the density of state at Fermi level. It was observed that the substitution of various transition metals in the Mn-site leads to a decrease in conductivity of the doped manganite samples, with conduction being controlled by the disorder induced localization of charge carriers.

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