scholarly journals Localization of charge carriers in layered crystals MexTiSe2 (Me = Cr, Mn, Cu) studied by the resonant photoemission

2013 ◽  
Vol 114 (13) ◽  
pp. 133704 ◽  
Author(s):  
Y. M. Yarmoshenko ◽  
A. S. Shkvarin ◽  
M. V. Yablonskikh ◽  
A. I. Merentsov ◽  
A. N. Titov
Keyword(s):  
Charge Carriers ◽  
Resonant Photoemission ◽  
Layered Crystals ◽  
Localization Of Charge Carriers

Localization of charge carriers by Pr in theTl2Ba2Ca1−xPrxCu2Oysystem

2002 ◽  
Vol 66 (21) ◽  
Author(s):  
S. N. Bhatia ◽  
P. Chowdhury ◽  
S. Gupta ◽  
B. D. Padalia
Keyword(s):  
Charge Carriers ◽  
Localization Of Charge Carriers

New mechanisms of localization of charge carriers in nanosilicon

2004 ◽  
Vol 46 (1) ◽  
pp. 45-48
Author(s):  
I. V. Blonskyy ◽  
A. Yu. Vakhnin ◽  
V. N. Kadan ◽  
A. K. Kadashchuk
Keyword(s):  
Charge Carriers ◽  
Localization Of Charge Carriers

Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies

2012 ◽  
Vol 46 (8) ◽  
pp. 998-1002 ◽  
Author(s):  
E. A. Shevchenko ◽  
V. N. Jmerik ◽  
A. M. Mizerov ◽  
A. A. Sitnikova ◽  
S. V. Ivanov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Charge Carriers ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Localization Of Charge Carriers

Bulk photovoltaic effect in ferroelectrics and the localization of charge carriers

1980 ◽  
Vol 29 (1) ◽  
pp. 41-42 ◽  
Author(s):  
E. V. Bursian ◽  
Ya. G. Girshberg ◽  
N. N. Trunov
Keyword(s):  
Photovoltaic Effect ◽  
Charge Carriers ◽  
Localization Of Charge Carriers

Influence of Mn Site Substitution on Electrical Resistivity and Magnetoresistance Properties of Rare Earth Manganite

2014 ◽  
Vol 1047 ◽  
pp. 123-129 ◽  
Author(s):  
Tejas M. Tank ◽  
D. Bhargava ◽  
V. Sridharan ◽  
S.S. Samatham ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Charge Carriers ◽  
Variable Range Hopping ◽  
Density Of State ◽  
Spin Dependent Scattering ◽  
Hopping Model ◽  
Variable Range Hopping Model ◽  
Sn Substitution ◽  
Localization Of Charge Carriers

We investigate the effects of Cr, Ru and Sn substitution on electrical resistivity and magnetoresistance property of polycrystalline samples La0.67Sr0.33Mn1-xBxO3(x = 0, 0.05; B= Ru, Cr and Sn) compounds. The value of M-I transition temperature (TP) decreases while resistivity increases with Cr, Ru and Sn substitution, moreover, the largest low-temperature magnetoresistance (MR %) is found at magnetic field dependent (Isotherm), which suggest that the spin-dependent scattering from internal grain regions is also responsible for the low-temperature MR %. Resistivity data have been fitted with the variable range hopping model to estimate the density of state at Fermi level. It was observed that the substitution of various transition metals in the Mn-site leads to a decrease in conductivity of the doped manganite samples, with conduction being controlled by the disorder induced localization of charge carriers.

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