scholarly journals Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

2013 ◽  
Vol 88 (15) ◽  
Author(s):  
C. Coletti ◽  
S. Forti ◽  
A. Principi ◽  
K. V. Emtsev ◽  
A. A. Zakharov ◽  
...  
2002 ◽  
Vol 507-510 ◽  
pp. 223-228 ◽  
Author(s):  
L. Plucinski ◽  
T. Strasser ◽  
B.J. Kowalski ◽  
K. Rossnagel ◽  
T. Boetcher ◽  
...  

1987 ◽  
Vol 36 (9) ◽  
pp. 4681-4691 ◽  
Author(s):  
P. A. P. Lindberg ◽  
P. L. Wincott ◽  
L. I. Johansson ◽  
A. N. Christensen

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 773
Author(s):  
Ke Wang ◽  
Ben Ecker ◽  
Yongli Gao

Angle-resolved photoemission spectroscopy (ARPES) is a vital technique, collecting data from both the energy and momentum of photoemitted electrons, and is indispensable for investigating the electronic band structure of solids. This article provides a review on ARPES studies of the electronic band structure of organic single crystals, including organic charge transfer conductors; organic semiconductors; and organo-metallic perovskites. In organic conductors and semiconductors, band dispersions are observed that are highly anisotropic. The Van der Waals crystal nature, the weak electron wavefunction overlap, as well as the strong electron-phonon coupling result in many organic crystals having indiscernible dispersion. In comparison, organo-metallic perovskite halides are characterized by strong s-p orbitals from the metal and halide at the top of the valence bands, with dispersions similar to those in inorganic materials.


1987 ◽  
Vol 192 (2-3) ◽  
pp. 353-365 ◽  
Author(s):  
P.A.P. Lindberg ◽  
L.I. Johansson ◽  
A.N. Christensen

1999 ◽  
Vol 60 (11) ◽  
pp. 8055-8066 ◽  
Author(s):  
R. Courths ◽  
S. Löbus ◽  
S. Halilov ◽  
T. Scheunemann ◽  
H. Gollisch ◽  
...  

1993 ◽  
Vol 505 (5) ◽  
pp. 450-464 ◽  
Author(s):  
Markus Lau ◽  
Stefan Löbus ◽  
Ralf Courths ◽  
Samed Halilov ◽  
Herbert Gollisch ◽  
...  

2014 ◽  
Vol 1693 ◽  
Author(s):  
C. Coletti ◽  
S. Forti ◽  
A. Principi ◽  
K.V. Emtsev ◽  
A.A. Zakharov ◽  
...  

ABSTRACTRecently, much attention has been devoted to trilayer graphene because it displays stacking and electric field dependent electronic properties well-suited for electronic and photonic applications [1-8]. Several theoretical studies have predicted the electronic dispersion of Bernal (ABA) and rhombohedral (ABC) stacked trilayers. However, a direct experimental visualization of a well-resolved band structure has not yet been reported. In this work, we obtain large area highly homogenous quasi-free trilayer graphene (TLG) on 6H-SiC(0001) and measure its electronic bands via angle resolved photoemission spectroscopy (ARPES). We demonstrate by low energy electron microscopy measurements that that trilayer domains on SiC extend over areas of tens of square micrometers. By fitting tight-binding bands to the experimental data we extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. For ABC stacks and in the presence of an electrostatic asymmetry, we detect the existence of a band-gap of about 120 meV. Notably our results suggest that on SiC substrates the occurrence of ABC-stacked TLG is significantly higher than in natural bulk graphite. Hence, growing TLG on SiC might be the answer to the challenge of controllably synthesizing ABC-stacked trilayer – an ideal material for the fabrication of a new class of gap-tunable devices.


1987 ◽  
Vol 192 (2-3) ◽  
pp. A567
Author(s):  
P.A.P. Lindberg ◽  
L.I. Johansson ◽  
A.N. Christensen

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 967-970
Author(s):  
D JENKINS

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