scholarly journals Bulk-edge correspondence in fractional Chern insulators

2013 ◽  
Vol 88 (8) ◽  
Author(s):  
Zhao Liu ◽  
D. L. Kovrizhin ◽  
Emil J. Bergholtz
Keyword(s):  
Chern Insulators

scholarly journals Chiral interface states and related quantized transport in disordered Chern insulators

2021 ◽  
Vol 103 (7) ◽  
Author(s):  
Zhi-Qiang Zhang ◽  
Chui-Zhen Chen ◽  
Yijia Wu ◽  
Hua Jiang ◽  
Junwei Liu ◽  
...  
Keyword(s):  
Interface States ◽  
Chern Insulators

scholarly journals Gate-Tunable Fractional Chern Insulators in Twisted Double Bilayer Graphene

2021 ◽  
Vol 126 (2) ◽  
Author(s):  
Zhao Liu ◽  
Ahmed Abouelkomsan ◽  
Emil J. Bergholtz
Keyword(s):  
Bilayer Graphene ◽  
Chern Insulators

scholarly journals Series of Abelian and non-Abelian states inC>1fractional Chern insulators

2013 ◽  
Vol 87 (20) ◽  
Author(s):  
A. Sterdyniak ◽  
C. Repellin ◽  
B. Andrei Bernevig ◽  
N. Regnault
Keyword(s):  
Chern Insulators

Strong magnetization and Chern insulators in compressed graphene/CrI3 van der Waals heterostructures

2018 ◽  
Vol 97 (8) ◽  
Author(s):  
Jiayong Zhang ◽  
Bao Zhao ◽  
Tong Zhou ◽  
Yang Xue ◽  
Chunlan Ma ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Chern Insulators

Non-Dirac Chern insulators with large band gaps and spin-polarized edge states

Nanoscale ◽  
2018 ◽  
Vol 10 (18) ◽  
pp. 8569-8577 ◽  
Author(s):  
Y. Xue ◽  
J. Y. Zhang ◽  
B. Zhao ◽  
X. Y. Wei ◽  
Z. Q. Yang
Keyword(s):  
Band Gap ◽  
Band Gaps ◽  
Edge States ◽  
Half Metallic ◽  
Spin Polarized ◽  
Chern Insulators

A non-Dirac Chern insulator with a large band gap (244 meV) and half-metallic edge states was realized in a PbC/MnSe heterostructure.

scholarly journals Comparative study of Weyl semimetal and topological/Chern insulators: Thin-film point of view

2016 ◽  
Vol 94 (23) ◽  
Author(s):  
Yukinori Yoshimura ◽  
Wataru Onishi ◽  
Koji Kobayashi ◽  
Tomi Ohtsuki ◽  
Ken-Ichiro Imura
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Point Of View ◽  
Weyl Semimetal ◽  
Chern Insulators

scholarly journals Observation of fractional Chern insulators in a van der Waals heterostructure

Science ◽  
2018 ◽  
Vol 360 (6384) ◽  
pp. 62-66 ◽  
Author(s):  
Eric M. Spanton ◽  
Alexander A. Zibrov ◽  
Haoxin Zhou ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Boron Nitride ◽  
Symmetry Breaking ◽  
Hexagonal Boron Nitride ◽  
Landau Levels ◽  
Topological Order ◽  
Hall Conductance ◽  
Van Der Waals Heterostructure ◽  
Ordered Phases ◽  
Chern Insulators

Topologically ordered phases are characterized by long-range quantum entanglement and fractional statistics rather than by symmetry breaking. First observed in a fractionally filled continuum Landau level, topological order has since been proposed to arise more generally at fractional fillings of topologically nontrivial Chern bands. Here we report the observation of gapped states at fractional fillings of Harper-Hofstadter bands arising from the interplay of a magnetic field and a superlattice potential in a bilayer graphene–hexagonal boron nitride heterostructure. We observed phases at fractional filling of bands with Chern indices C=−1, ±2, and ±3. Some of these phases, in C=−1 and C=2 bands, are characterized by fractional Hall conductance—that is, they are known as fractional Chern insulators and constitute an example of topological order beyond Landau levels.

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