scholarly journals Electrostatic tuning of the properties of disordered indium-oxide films near the superconductor-insulator transition

2013 ◽  
Vol 88 (2) ◽  
Author(s):  
Yeonbae Lee ◽  
Aviad Frydman ◽  
Tianran Chen ◽  
Brian Skinner ◽  
A. M. Goldman
Keyword(s):  
Indium Oxide ◽  
Oxide Films ◽  
Insulator Transition ◽  
Indium Oxide Films ◽  
Superconductor Insulator Transition

scholarly journals Self-duality and a Hall-insulator phase near the superconductor-to-insulator transition in indium-oxide films

2015 ◽  
Vol 113 (2) ◽  
pp. 280-285 ◽  
Author(s):  
Nicholas P. Breznay ◽  
Myles A. Steiner ◽  
Steven Allan Kivelson ◽  
Aharon Kapitulnik
Keyword(s):  
Magnetic Field ◽  
Indium Oxide ◽  
Quantum Hall ◽  
Oxide Films ◽  
Insulator Transition ◽  
Hall Resistance ◽  
Self Duality ◽  
Universal Values ◽  
The Magnetic Field ◽  
Indium Oxide Films

We combine measurements of the longitudinal (ρxx) and Hall (ρxy) resistivities of disordered 2D amorphous indium-oxide films to study the magnetic-field tuned superconductor-to-insulator transition (H-SIT) in the T→0 limit. At the critical field, Hc, the full resistivity tensor is T independent with ρxx(Hc)=h/4e2 and ρxy(Hc)=0 within experimental uncertainty in all films (i.e., these appear to be “universal” values); this is strongly suggestive that there is a particle–vortex self-duality at H=Hc. The transition separates the (presumably) superconducting state at H<Hc from a “Hall-insulator” phase in which ρxx→∞ as T→0 whereas ρxy approaches a nonzero value smaller than its “classical value” H/nec; i.e., 0<ρxy<H/nec. A still higher characteristic magnetic field, Hc*>Hc, at which the Hall resistance is T independent and roughly equal to its classical value, ρxy≈H/nec, marks an additional crossover to a high-field regime (probably to a Fermi insulator) in which ρxy>H/nec and possibly diverges as T→0. We also highlight a profound analogy between the H-SIT and quantum-Hall liquid-to-insulator transitions (QHIT).

scholarly journals Enhanced Field Electron Emission from Photocurrent Treated Nanostructured Indium Oxide Films

2018 ◽  
Vol 228 ◽  
pp. 04003
Author(s):  
Zhenglin Li ◽  
Fuyuan Si ◽  
Miaomiao Wang ◽  
Weigang He ◽  
Yuwei Zhang
Keyword(s):  
Field Emission ◽  
Indium Oxide ◽  
Electron Emission ◽  
Oxide Films ◽  
Field Electron Emission ◽  
Chemical Vapor Deposition Method ◽  
Treatment Technique ◽  
Field Electron ◽  
Ito Glass ◽  
Indium Oxide Films

Field electron emission currents from nanostructured films always have unsatisfied stability. This paper introduces a photocurrent treatment technique to enhance the filed emission properties, and gives a kind of nanostructured indium oxide film suitable for the technique. The products were prepared on patterned ITO glass substrate by using chemical vapor deposition method. With the increase of reaction time, the morphologies of the films changed from cocoonlike particles to hybrid thin films, and finally flowerlike nanostructures were formed. Photocurrent and field electron emission characteristics of the products have been studied. After photocurrent treatment, the flowerlike indium oxide films show stable field emission current (fluctuation is less than 5%), low field emission threshold (at 7.5 V/m, the current density is 1 mA/cm2) and high enhancement factor of electrical field of 778. The field emission test results validated that the photocurrent treated flowerlike indium oxide films may act as electron emitters and applied in display applications.

Band-gap narrwing in tin-doped indium oxide films

1988 ◽  
Vol 33-34 ◽  
pp. 898-904 ◽  
Author(s):  
Lata Gupta ◽  
Abhai Mansingh ◽  
P.K. Srivastava
Keyword(s):  
Band Gap ◽  
Indium Oxide ◽  
Oxide Films ◽  
Indium Oxide Films

Structure and Optical Properties of Epitaxial Indium Oxide Films Deposited on Y-Stabilized ZrO2 (111) by MOCVD

2015 ◽  
Vol 44 (8) ◽  
pp. 2719-2724 ◽  
Author(s):  
Cansong Zhao ◽  
Zhao Li ◽  
Wei Mi ◽  
Caina Luan ◽  
Xianjin Feng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Indium Oxide ◽  
Oxide Films ◽  
Indium Oxide Films
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