scholarly journals Heat transport by long mean free path vibrations in amorphous silicon nitride near room temperature

2013 ◽  
Vol 87 (21) ◽  
Author(s):  
Rubina Sultan ◽  
A. D. Avery ◽  
J. M. Underwood ◽  
S. J. Mason ◽  
D. Bassett ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Heat Transport ◽  
Free Path ◽  
Room Temperature ◽  
Mean Free Path ◽  
Amorphous Silicon Nitride

The Generation and Bleaching of Positive Charge in Gate-Quality Nitrogen-Rich Amorphous Silicon Nitride By Sub-Bandgap Illumination

1990 ◽  
Vol 192 ◽  
Author(s):  
J. Kanicki ◽  
M. Sankaran
Keyword(s):  
Silicon Nitride ◽  
Time Dependence ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Positive Charge ◽  
Amorphous Silicon Nitride ◽  
Exponential Time ◽  
Stretched Exponential ◽  
Silicon Nitride Films ◽  
First Time

ABSTRACTWe report, for the first time, on the stretched-exponential time dependence of the generation and bleaching of positive charge in gate-quality nitrogen-rich amorphous silicon nitride films subjected to the sub-bandgap illumination at room temperature in vacuum. We also propose a mechanism which we believe is responsible for the generation and bleaching of the positive charge in the nitride films.

Sintering of Nanopowders of Amorphous Silicon Nitride Under Ultrahigh Pressure

2000 ◽  
Vol 15 (4) ◽  
pp. 988-994 ◽  
Author(s):  
Ya-Li Li ◽  
Yong Liang ◽  
Fen Zheng ◽  
Xian-Feng Ma ◽  
Suo-Jing Cui
Keyword(s):  
Grain Size ◽  
High Pressure ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Hot Isostatic Pressing ◽  
External Pressure ◽  
Ultrahigh Pressure ◽  
Air Exposure ◽  
Amorphous Silicon Nitride

Nanopowders of amorphous silicon nitride were densified and sintered without additives under ultrahigh pressure (1.0–5.0 GPa) between room temperature and 1600 °C. The powders had a mean diameter of 18 nm and contained ∼5.0 wt% oxygen that came from air-exposure oxidation. Sintering results at different temperatures were characterized in terms of sintering density, hardness, phase structure, and grain size. It was observed that the nanopowders can be pressed to a high density (87%) even at room temperature under the high pressure. Bulk Si3N4 amorphous and crystalline ceramics (relative density: 95–98%) were obtained at temperatures slightly below the onset of crystallization (1000–1100 °C) and above 1420 °C, respectively. Rapid grain growth occurred during the crystallization leading to a grain size (>160 nm) almost 1 order of magnitude greater than the starting particulate diameters. With the rise of sintering temperature, a final density was reached between 1350 and 1420 °C, which seemed to be independent of the pressure applied (1.0–5.0 GPa). The densification temperature observed under the high pressure is lower by 580 °C than that by hot isostatic pressing sintering, suggesting a significantly enhanced low-temperature sintering of the nanopowders under a high external pressure.

scholarly journals Hydrogen effects on the thermal conductivity of delocalized vibrational modes in amorphous silicon nitride (a−SiNx:H)

2021 ◽  
Vol 5 (3) ◽  
Author(s):  
Jeffrey L. Braun ◽  
Sean W. King ◽  
Eric R. Hoglund ◽  
Mehrdad Abbasi Gharacheh ◽  
Ethan A. Scott ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vibrational Modes ◽  
Amorphous Silicon Nitride

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

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