Optical band gap hierarchy in a magnetic oxide: Electronic structure of NiFe2O4

2012 ◽  
Vol 86 (20) ◽  
Author(s):  
Q. - C. Sun ◽  
H. Sims ◽  
D. Mazumdar ◽  
J. X. Ma ◽  
B. S. Holinsworth ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Optical Band Gap ◽  
Magnetic Oxide

scholarly journals Electronic structure and optical band gap of CoFe2O4 thin films

2012 ◽  
Vol 101 (16) ◽  
pp. 161902 ◽  
Author(s):  
A. V. Ravindra ◽  
P. Padhan ◽  
W. Prellier
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Band Gap ◽  
Optical Band Gap

scholarly journals A Study of the Optical Band Gap of Lithium Tungsten Trioxide Thin Films

1990 ◽  
Vol 210 ◽  
Author(s):  
G. Berera ◽  
R.B. Goldner ◽  
F.O. Amtz ◽  
K.K. Wong ◽  
A. Ciaccia ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Band Gap ◽  
Tungsten Trioxide ◽  
Optical Band Gap ◽  
Tungsten Bronze ◽  
Band Model ◽  
Lithium Insertion ◽  
Smart Window ◽  
Sputter Deposited

AbstractThe insertion of lithium (lithiation) into tungsten trioxide results in the formation of the tungsten bronze LixWO3. Polycrystalline, rf sputter deposited thin films of LixWO3 were investigated for their application in Smart Window Devices. The optical band gap studies of these films revealed the narrowing of the intrinsic band gap as a consequence of lithium insertion. The results suggest that the rigid band model, which is generally adopted in interpreting the electronic structure of the tungsten bronzes may not be applicable in Lix WO3.

Biaxial stress-dependent optical band gap, crystalline, and electronic structure in wurtzite ZnO: Experimental and ab initio study

2008 ◽  
Vol 104 (8) ◽  
pp. 083516 ◽  
Author(s):  
Y. F. Li ◽  
B. Yao ◽  
Y. M. Lu ◽  
Y. Q. Gai ◽  
C. X. Cong ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Ab Initio ◽  
Band Gap ◽  
Optical Band Gap ◽  
Biaxial Stress ◽  
Ab Initio Study ◽  
Stress Dependent

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

New Insights into the Nature of the Band Gap of CuGeO3 Nanoparticles: Synthesis, Electronic Structure, and Optical and Photocatalytic Properties

2019 ◽  
Author(s):  
Victor Y. Suzuki ◽  
Luís Henrique Cardozo Amorin ◽  
Natália H. de Paula ◽  
Anderson R. Albuquerque ◽  
Julio Ricardo Sambrano ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Material Design ◽  
Photocatalytic Properties ◽  
Critical Parameters ◽  
Synthetic Approach ◽  
Microwave Assisted ◽  
Theoretical Approaches ◽  
Nanoparticles Synthesis ◽  
First Time

<p>We report, for the first time, new insights into the nature of the band gap of <a>CuGeO<sub>3</sub> </a>(CGO) nanocrystals synthesized from a microwave-assisted hydrothermal method in the presence of citrate. To the best of our knowledge, this synthetic approach has the shortest reaction time and it works at the lowest temperatures reported in the literature for the preparation of these materials. The influence of the surfactant on the structural, electronic, optical, and photocatalytic properties of CGO nanocrystals is discussed by a combination of experimental and theoretical approaches, and that results elucidates the nature of the band gap of synthetized CGO nanocrystals. We believe that this particular strategy is one of the most critical parameters for the development of innovative applications and that result could shed some light on the emerging material design with entirely new properties.</p> <p><b> </b></p>

scholarly journals Polymer Thermal Treatment Production of Cerium Doped Willemite Nanoparticles: An Analysis of Structure, Energy Band Gap and Luminescence Properties

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1118
Author(s):  
Ibrahim Mustapha Alibe ◽  
Khamirul Amin Matori ◽  
Mohd Hafiz Mohd Zaid ◽  
Salisu Nasir ◽  
Ali Mustapha Alibe ◽  
...  
Keyword(s):  
Solid State ◽  
Thermal Treatment ◽  
Band Gap ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Blue Emission ◽  
Green Emission ◽  
Band Gap Energy ◽  
Solid State Lighting ◽  
Gap Energy

The contemporary market needs for enhanced solid–state lighting devices has led to an increased demand for the production of willemite based phosphors using low-cost techniques. In this study, Ce3+ doped willemite nanoparticles were fabricated using polymer thermal treatment method. The special effects of the calcination temperatures and the dopant concentration on the structural and optical properties of the material were thoroughly studied. The XRD analysis of the samples treated at 900 °C revealed the development and or materialization of the willemite phase. The increase in the dopant concentration causes an expansion of the lattice owing to the replacement of larger Ce3+ ions for smaller Zn2+ ions. Based on the FESEM and TEM micrographs, the nanoparticles size increases with the increase in the cerium ions. The mean particles sizes were estimated to be 23.61 nm at 1 mol% to 34.02 nm at 5 mol% of the cerium dopant. The optical band gap energy of the doped samples formed at 900 °C decreased precisely by 0.21 eV (i.e., 5.21 to 5.00 eV). The PL analysis of the doped samples exhibits a strong emission at 400 nm which is ascribed to the transition of an electron from localized Ce2f state to the valence band of O2p. The energy level of the Ce3+ ions affects the willemite crystal lattice, thus causing a decrease in the intensity of the green emission at 530 nm and the blue emission at 485 nm. The wide optical band gap energy of the willemite produced is expected to pave the way for exciting innovations in solid–state lighting applications.

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