Electronic structure and optical band gap of silver photo-diffused Ge2Sb2Te5 thin film

2013 ◽  
Vol 273 ◽  
pp. 437-443 ◽  
Author(s):  
S. Kumar ◽  
D. Singh ◽  
R. Thangaraj
Keyword(s):  
Thin Film ◽  
Electronic Structure ◽  
Band Gap ◽  
Optical Band Gap

Optical band gap of nanocompsoite MEH-PPV:TiO2 thin film

2010 ◽  
Author(s):  
Puteri Sarah Mohamad Saad ◽  
Fazlinashatul Suhaidah Zahid ◽  
Ahmad Sazali Hamzah ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Optical Band Gap

scholarly journals Effect of concentration of cadmium sulfate solution on structural, optical and electric properties of Cd1–x Zn x S thin films

2021 ◽  
Vol 42 (11) ◽  
pp. 112101
Author(s):  
Yuming Xue ◽  
Shipeng Zhang ◽  
Dianyou Song ◽  
Liming Zhang ◽  
Xinyu Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Film Growth ◽  
Structural Characteristics ◽  
Hexagonal Phase ◽  
Zinc Content ◽  
Sulfate Concentration ◽  
Cadmium Sulfate

Abstract Cd1– x Zn x S thin films were deposited by chemical bath deposition (CBD) on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film. The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity. The distribution diagrams of thin film elements illustrate the film growth rate changes on the trend of the increase, decrease, and increase with the increase of cadmium sulfate concentration. XRD studies exhibit the crystal structure of the film is the hexagonal phase, and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M. Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value E g can be expressed by the equation E g(x) = 0.59x 2 + 0.69x + 2.43. Increasing the zinc content can increase the optical band gap, and the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration, however, all of them have good transmittance. At a concentration of 0.005 M, the thin film has good absorbance in the 300–800 nm range, 80% transmittance, and band gap value of 3.24 eV, which is suitable for use as a buffer layer for solar cells.

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

Characteristics of optical band gap of tantalum oxide thin film deposited by ion beam sputtering

2017 ◽  
Vol 25 (1) ◽  
pp. 21-27
Author(s):  
刘华松 LIU Hua-song ◽  
杨 霄 YANG Xiao ◽  
王利栓 WANG Li-shuan ◽  
姜玉刚 JIANG Yu-gang ◽  
季一勤 JI Yi-qin ◽  
...  
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Optical Band Gap ◽  
Ion Beam ◽  
Tantalum Oxide ◽  
Oxide Thin Film ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

scholarly journals Electronic structure and optical band gap of CoFe2O4 thin films

2012 ◽  
Vol 101 (16) ◽  
pp. 161902 ◽  
Author(s):  
A. V. Ravindra ◽  
P. Padhan ◽  
W. Prellier
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Band Gap ◽  
Optical Band Gap

Effect of Thermal Annealing on Structure and Optical Band Gap of Amorphous Se66Te25Sb9 Thin Film

2014 ◽  
Vol 20 (5) ◽  
pp. 1081-1084 ◽  
Author(s):  
D. K. Dwivedi ◽  
H. P. Pathak ◽  
Vipin Kumar ◽  
Nitesh Shukla
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Thermal Annealing ◽  
Optical Band Gap

Effect of Tin Composition on Cu2ZnSnS4 Photovoltaic Absorbers

2012 ◽  
Vol 534 ◽  
pp. 156-159 ◽  
Author(s):  
Dong Hua Fan ◽  
Rong Zhang ◽  
Hui Ren Peng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Crystallite Size ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
X Ray ◽  
Poor Condition ◽  
Czts Thin Films

Cu2ZnSnS4 (CZTS) thin films are prepared by sulfurizing the precursors deposited by vacuum evaporation methods. The samples sulfurized at 500°C for 3h shows the strong (112) diffraction peak at 28.45˚, suggesting the successful synthesis of CZTS thin films. The X-ray diffraction shows that CZTS thin film prepared in Sn-poor condition have the best crystallinity. The Sn-dependent crystallite size was calculated to be 19.53-21.03 nm. In addition, we found that the optical band gap with various Sn contents can be modulated at 1.48-1.85 eV

scholarly journals Effect on optical band-gap of transparent and conductive CdIn2O4 thin film due to defects-induced burstein-moss and band-gap narrowing characteristics

2005 ◽  
Vol 54 (2) ◽  
pp. 842
Author(s):  
San Hai-Sheng ◽  
Li Bin ◽  
Feng Bo-Xue ◽  
He Yu-Yang ◽  
Chen Chong
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Optical Band Gap ◽  
Band Gap Narrowing
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