scholarly journals Evidence of strong correlations at the van Hove singularity in the scanning tunneling spectra of superconducting Bi2Sr2CaCu2O8+δsingle crystals

2012 ◽  
Vol 85 (21) ◽  
Author(s):  
Jouko Nieminen ◽  
Ilpo Suominen ◽  
Tanmoy Das ◽  
R. S. Markiewicz ◽  
A. Bansil
Keyword(s):  
Scanning Tunneling ◽  
Strong Correlations ◽  
Van Hove Singularity

scholarly journals Moiréless correlations in ABCA graphene

2021 ◽  
Vol 118 (4) ◽  
pp. e2017366118 ◽  
Author(s):  
Alexander Kerelsky ◽  
Carmen Rubio-Verdú ◽  
Lede Xian ◽  
Dante M. Kennes ◽  
Dorri Halbertal ◽  
...  
Keyword(s):  
Theoretical Calculations ◽  
Van Der Waals ◽  
Bilayer Graphene ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Van Hove Singularity ◽  
Natural Interfaces ◽  
Simple Material ◽  
Electronic Band ◽  
Topological Quantum

Atomically thin van der Waals materials stacked with an interlayer twist have proven to be an excellent platform toward achieving gate-tunable correlated phenomena linked to the formation of flat electronic bands. In this work we demonstrate the formation of emergent correlated phases in multilayer rhombohedral graphene––a simple material that also exhibits a flat electronic band edge but without the need of having a moiré superlattice induced by twisted van der Waals layers. We show that two layers of bilayer graphene that are twisted by an arbitrary tiny angle host large (micrometer-scale) regions of uniform rhombohedral four-layer (ABCA) graphene that can be independently studied. Scanning tunneling spectroscopy reveals that ABCA graphene hosts an unprecedentedly sharp van Hove singularity of 3–5-meV half-width. We demonstrate that when this van Hove singularity straddles the Fermi level, a correlated many-body gap emerges with peak-to-peak value of 9.5 meV at charge neutrality. Mean-field theoretical calculations for model with short-ranged interactions indicate that two primary candidates for the appearance of this broken symmetry state are a charge-transfer excitonic insulator and a ferrimagnet. Finally, we show that ABCA graphene hosts surface topological helical edge states at natural interfaces with ABAB graphene which can be turned on and off with gate voltage, implying that small-angle twisted double-bilayer graphene is an ideal programmable topological quantum material.

Interrelationships of factors of social development are more complex than Life History Theory predicts

2019 ◽  
Vol 42 ◽  
Author(s):  
Boris Kotchoubey
Keyword(s):  
Life History ◽  
Social Development ◽  
Life History Theory ◽  
Strong Correlations ◽  
Behavioral Features

Abstract Life History Theory (LHT) predicts a monotonous relationship between affluence and the rate of innovations and strong correlations within a cluster of behavioral features. Although both predictions can be true in specific cases, they are incorrect in general. Therefore, the author's explanations may be right, but they do not prove LHT and cannot be generalized to other apparently similar processes.

Dielectronic Recombination in the Average-Atom Model

1988 ◽  
Vol 102 ◽  
pp. 215
Author(s):  
R.M. More ◽  
G.B. Zimmerman ◽  
Z. Zinamon
Keyword(s):  
Detailed Balance ◽  
Systematic Errors ◽  
Dielectronic Recombination ◽  
Rate Equations ◽  
Strong Correlations ◽  
Dense Plasmas ◽  
Atom Model ◽  
New Feature ◽  
Average Atom Model ◽  
Attachment Process

Autoionization and dielectronic attachment are usually omitted from rate equations for the non–LTE average–atom model, causing systematic errors in predicted ionization states and electronic populations for atoms in hot dense plasmas produced by laser irradiation of solid targets. We formulate a method by which dielectronic recombination can be included in average–atom calculations without conflict with the principle of detailed balance. The essential new feature in this extended average atom model is a treatment of strong correlations of electron populations induced by the dielectronic attachment process.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

Resolution in the scanning tunneling microscope

1991 ◽  
Vol 49 ◽  
pp. 488-489
Author(s):  
R. J. Wilson ◽  
D. D. Chambliss ◽  
S. Chiang ◽  
V. M. Hallmark
Keyword(s):  
Scanning Tunneling Microscope ◽  
Fundamental Principle ◽  
Atomic Scale ◽  
Lateral Resolution ◽  
Scanning Tunneling ◽  
Electronic Noise ◽  
Vertical Resolution ◽  
Tunneling Microscopy ◽  
Spatial Profile ◽  
Theoretical Analyses

Scanning tunneling microscopy (STM) has been used for many atomic scale observations of metal and semiconductor surfaces. The fundamental principle of the microscope involves the tunneling of evanescent electrons through a 10Å gap between a sharp tip and a reasonably conductive sample at energies in the eV range. Lateral and vertical resolution are used to define the minimum detectable width and height of observed features. Theoretical analyses first discussed lateral resolution in idealized cases, and recent work includes more general considerations. In all cases it is concluded that lateral resolution in STM depends upon the spatial profile of electronic states of both the sample and tip at energies near the Fermi level. Vertical resolution is typically limited by mechanical and electronic noise.

Scanning tunneling microscopy of E. coli RNA polymerase deposited onto an Au substrate by an electrochemical process

1991 ◽  
Vol 49 ◽  
pp. 378-379
Author(s):  
Rebecca W. Keller ◽  
Carlos Bustamante ◽  
David Bear
Keyword(s):  
Scanning Tunneling Microscope ◽  
Biological Sample ◽  
Substrate Surface ◽  
Electrochemical Process ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Tunneling Microscope ◽  
E Coli ◽  
Preparation Techniques

Under ideal conditions, the Scanning Tunneling Microscope (STM) can create atomic resolution images of different kinds of samples. The STM can also be operated in a variety of non-vacuum environments. Because of its potentially high resolution and flexibility of operation, it is now being applied to image biological systems. Several groups have communicated the imaging of double and single stranded DNA.However, reproducibility is still the main problem with most STM results on biological samples. One source of irreproducibility is unreliable sample preparation techniques. Traditional deposition methods used in electron microscopy, such as glow discharge and spreading techniques, do not appear to work with STM. It seems that these techniques do not fix the biological sample strongly enough to the substrate surface. There is now evidence that there are strong forces between the STM tip and the sample and, unless the sample is strongly bound to the surface, it can be swept aside by the tip.

Experiments with a scanning tunneling microscope (STM) mounted in a scanning electron microscope (SEM)

1986 ◽  
Vol 44 ◽  
pp. 636-639
Author(s):  
Oliver C. Wells ◽  
Mark E. Welland
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Mechanical Stability ◽  
Tunneling Current ◽  
Feedback System ◽  
Scanning Tunneling ◽  
Surface Profiling ◽  
Close Proximity ◽  
Metal Tip ◽  
Scanning Electron

Scanning tunneling microscopes (STM) exist in two versions. In both of these, a pointed metal tip is scanned in close proximity to the specimen surface by means of three piezos. The distance of the tip from the sample is controlled by a feedback system to give a constant tunneling current between the tip and the sample. In the low-end STM, the system has a mechanical stability and a noise level to give a vertical resolution of between 0.1 nm and 1.0 nm. The atomic resolution STM can show individual atoms on the surface of the specimen.A low-end STM has been put into the specimen chamber of a scanning electron microscope (SEM). The first objective was to investigate technological problems such as surface profiling. The second objective was for exploratory studies. This second objective has already been achieved by showing that the STM can be used to study trapping sites in SiO2.

SEM/FESEM imaging of lamellar structures in melt extruded polyethylene films

1992 ◽  
Vol 50 (2) ◽  
pp. 1142-1143
Author(s):  
R.T. Chen ◽  
M.G. Jamieson ◽  
R. Callahan
Keyword(s):  
Imaging Techniques ◽  
Membrane Surface ◽  
High Stress ◽  
Extrusion Direction ◽  
Polymeric Membranes ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Crystalline Polymers ◽  
Lamellar Structures ◽  
Resolution Imaging

“Row lamellar” structures have previously been observed when highly crystalline polymers are melt-extruded and recrystallized under high stress. With annealing to perfect the stacked lamellar superstructure and subsequent stretching in the machine (extrusion) direction, slit-like micropores form between the stacked lamellae. This process has been adopted to produce polymeric membranes on a commercial scale with controlled microporous structures. In order to produce the desired pore morphology, row lamellar structures must be established in the membrane precursors, i.e., as-extruded and annealed polymer films or hollow fibers. Due to the lack of pronounced surface topography, the lamellar structures have typically been investigated by replica-TEM, an indirect and time consuming procedure. Recently, with the availability of high resolution imaging techniques such as scanning tunneling microscopy (STM) and field emission scanning electron microscopy (FESEM), the microporous structures on the membrane surface as well as lamellar structures in the precursors can be directly examined.The materials investigated are Celgard® polyethylene (PE) flat sheet membranes and their film precursors, both as-extruded and annealed, made at different extrusion rates (E.R.).

Sign in / Sign up

Export Citation Format

Share Document