scholarly journals Valence band effective-mass Hamiltonians for the group-III nitrides from quasiparticle self-consistentGWband structures

2012 ◽  
Vol 85 (19) ◽  
Author(s):  
Atchara Punya ◽  
Walter R. L. Lambrecht
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Group Iii Nitrides ◽  
Group Iii

Band-Offsets Between Group-III-Nitrides

1994 ◽  
Vol 339 ◽  
Author(s):  
E. A. Albanesi ◽  
W. R. L. Lambrecht ◽  
B. Segall
Keyword(s):  
Valence Band ◽  
Group Iii Nitrides ◽  
Valence Band Maximum ◽  
Orbital Method ◽  
Type I ◽  
Band Offsets ◽  
Group Iii ◽  
Index Terms ◽  
Experimental Values

ABSTRACTThe valence-band offset at the zincblende AIN/GaN. AIN/InN and InN/GaN (110) interfaces are calculated self-consistently by means of the linear muffin-tin orbital method using up to 5+5 layer supercells. All interfaces have a type I-offset. Assuming interface orientation and polytype effects on the valence-band maximum to be reasonably small, a type I offset can also be expected for wurtzite interfaces. Our results are in very good agreement with experimental values for AIN/GaN, the only nitride interface for which they are available.Subject index terms: band offsets, interfaces, hetero junctions, superlattices. III-nitrides.

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics

Direct evaluation of hole effective mass of SnS–SnSe solid solutions with ARPES measurement

2021 ◽  
Author(s):  
Issei Suzuki ◽  
Zexin Lin ◽  
Sakiko Kawanishi ◽  
Kiyohisa Tanaka ◽  
Yoshitaro Nose ◽  
...  
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Solid Solutions ◽  
Photoemission Spectroscopy ◽  
Direct Evaluation ◽  
Hole Effective Mass ◽  
Single Crystalline ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Effective Masses

Valence band dispersions of single-crystalline SnS1-xSex solid solutions were observed by angle-resolved photoemission spectroscopy (ARPES). The hole effective masses, crucial factors in determining thermoelectric properties, were directly evaluated. They decrease...

Low-density nanoporous phases of group-III nitrides built from sodalite cage clusters

2013 ◽  
Vol 15 (21) ◽  
pp. 8186 ◽  
Author(s):  
Zhifeng Liu ◽  
Xinqiang Wang ◽  
Gaobin Liu ◽  
Ping Zhou ◽  
Jian Sui ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Low Density ◽  
Group Iii

Group III Nitrides

2017 ◽  
pp. 209-228
Author(s):  
Ferdinand Scholz
Keyword(s):  
Group Iii Nitrides ◽  
Group Iii

Growth Kinetics and Thermal Stress in AlN Bulk Crystal Growth

2002 ◽  
Author(s):  
Bei Wu ◽  
Ronghui Ma ◽  
Hui Zhang ◽  
Michael Dudley ◽  
Raoul Schlesser ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Temperature Distribution ◽  
Stress Level ◽  
Grown Crystal ◽  
Power Level ◽  
Chemical Species ◽  
Group Iii Nitrides ◽  
Minor Effect ◽  
Group Iii

Group III nitrides, such as GaN, AlN and InGaN, have attracted a lot of attention due to the development of blue-green and ultraviolet light emitting diodes (LEDs) and lasers. In this paper, an integrated model has developed based on the conservation of momentum, mass, chemical species and energy together with necessary boundary conditions that account for heterogeneous chemical reactions both at the source and seed surfaces. The simulation results have been compared with temperature measurements for different power levels and flow rates in a reactor specially designed for nitride crystal growth at NCSU. It is evident that the heat power level affects the entire temperature distribution greatly while the flow rate has minor effect on the temperature distribution. The results also show that the overall thermal stress level is higher than the critical resolved shear stress, which means thermal elastic stress can be a major source of dislocation density in the as-grown crystal. The stress level is strongly dependent on the temperature gradient in the as-grown crystal. Results are correlated well with defects showing in an X-ray topograph for the AlN wafer.

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