scholarly journals Magnetic-field-induced stabilization of nonequilibrium superconductivity in a normal-metal/insulator/superconductor junction

2011 ◽  
Vol 84 (22) ◽  
Author(s):  
J. T. Peltonen ◽  
J. T. Muhonen ◽  
M. Meschke ◽  
N. B. Kopnin ◽  
J. P. Pekola
Keyword(s):  
Magnetic Field ◽  
Normal Metal ◽  
Metal Insulator ◽  
Nonequilibrium Superconductivity

scholarly journals Fabrication of NIS and SIS Nanojunctions with Aluminum Electrodes and Studies of Magnetic Field Influence on IV Curves

Electronics ◽  
2021 ◽  
Vol 10 (23) ◽  
pp. 2894
Author(s):  
Mikhail Tarasov ◽  
Aleksandra Gunbina ◽  
Mikhail Fominsky ◽  
Artem Chekushkin ◽  
Vyacheslav Vdovin ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetron Sputtering ◽  
Normal Metal ◽  
Single Electron ◽  
Metal Insulator ◽  
Additional Conductivity ◽  
Iv Curves ◽  
The Magnetic Field ◽  
Different Thickness ◽  
Field Influence

Samples of superconductor–insulator–superconductor (SIS) and normal metal–insulator–superconductor (NIS) junctions with superconducting aluminum of different thickness were fabricated and experimentally studied, starting from conventional shadow evaporation with a suspended resist bridge. We also developed alternative fabrication by magnetron sputtering with two-step direct e-beam patterning. We compared Al film grain size, surface roughness, resistivity deposited by thermal evaporation and magnetron sputtering. The best-quality NIS junctions with large superconducting electrodes approached a resistance R(0)/R(V2Δ) factor ratio of 1000 at 0.3 K and over 10,000 at 0.1 K. At 0.1 K, R(0) was determined completely by the Andreev current. The contribution of the single-electron current dominated at V > VΔ/2. The single-electron resistance extrapolated to V = 0 exceeded the resistance R(V2Δ) by 3 × 109. We measured the influence of the magnetic field on NIS junctions and described the mechanism of additional conductivity due to induced Abrikosov vortices. The modified shape of the SINIS bolometer IV curve was explained by Joule overheating via NIN (normal metal–insulator–normal metal) channels.

Magnetic field dependence of the critical current anisotropy in normal metal‐YBa2Cu3O7−δthin‐film bilayers

1991 ◽  
Vol 58 (11) ◽  
pp. 1205-1207 ◽  
Author(s):  
R. H. Ono ◽  
L. F. Goodrich ◽  
J. A. Beall ◽  
M. E. Johansson ◽  
C. D. Reintsema
Keyword(s):  
Magnetic Field ◽  
Critical Current ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
Normal Metal

Magnetic Field Sensor Based on a Single Josephson Junction With a Multilayer Ferromagnet/Normal Metal Barrier

2021 ◽  
Vol 31 (5) ◽  
pp. 1-5
Author(s):  
Ivan P. Nevirkovets ◽  
Mikhail A. Belogolovskii ◽  
Oleg A. Mukhanov ◽  
John B. Ketterson
Keyword(s):  
Magnetic Field ◽  
Josephson Junction ◽  
Normal Metal ◽  
Magnetic Field Sensor ◽  
Field Sensor ◽  
Metal Barrier

EFFECT OF DISORDER ON THE ELECTRICAL PROPERTIES OF AMORPHOUS CONDUCTING CARBON FILMS: OBSERVANCE OF FIELD INDUCED METAL-INSULATOR TRANSITION?

2000 ◽  
Vol 14 (02n03) ◽  
pp. 224-229 ◽  
Author(s):  
V. MEENAKSHI ◽  
S. V. SUBRAMANYAM
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
External Magnetic Field ◽  
Low Temperature ◽  
Carbon Films ◽  
Electronic Systems ◽  
Metal Insulator Transition ◽  
Preparation Temperature ◽  
Metal Insulator ◽  
Effect Of Disorder

In this work, the influence of disorder on the electrical properties (DC conductivity and Magnetoresistance) of amorphous conducting carbon films, prepared by the pyrolysis of Tetra chloro phthalic anhydride, is reported and discussed. The low temperature electrical properties are analyzed in terms of the various models developed for disordered electronic systems. The results indicate the possibility of a metal - insulator (M-I) transition, both as a function of preparation temperature and an external magnetic field.

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