Normal-metal-insulator-superconductor tunnel-junction study of the magnetic field dependence of superconducting thin films

1977 ◽  
Vol 16 (7) ◽  
pp. 3165-3171 ◽  
Author(s):  
G. Gusman ◽  
J. F. Thomas ◽  
R. Deltour
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Field Dependence ◽  
Tunnel Junction ◽  
Magnetic Field Dependence ◽  
Normal Metal ◽  
Superconducting Thin Films ◽  
Metal Insulator ◽  
The Magnetic Field ◽  
Superconductor Tunnel Junction

Intrinsic Josephson Junctions on High-quality BSCCO-2212/2223 Superlattice Thin Films Grown by MOCVD

2001 ◽  
Vol 689 ◽  
Author(s):  
K. Endo ◽  
H. Sato ◽  
T. Yoshizawa ◽  
K. Abe ◽  
J. Itoh ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Field Dependence ◽  
Josephson Junctions ◽  
Magnetic Field Dependence ◽  
High Quality ◽  
Mesa Structure ◽  
Intrinsic Josephson Junctions ◽  
The Magnetic Field ◽  
Number Of Branches

ABSTRACTWe report on the successful preparation of intrinsic Josephson junctions on high-quality BSCCO-2212/2223 superlattice thin films grown by MOCVD. The surface of as-grown films was very smooth with the roughness of the order of a half unit cell. Mesas were effectively structured on the film by the liquid-nitrogen-cooled dry etching method. A typical I-V characteristic in the c-axis direction of a BSCCO film shows the hysteresis and multiple resistive branches. The number of branches is consistent with that of junctions calculated from the height of a mesa structure. This indicates that BSCCO-2212/2223 superlattice films consist of a series array of S(CuO2 bilayer) / I(SrO, BiO layers) / S(CuO2 trilayer) junction. The formation of stacked Josephson junctions was also confirmed by the temperature dependence and the magnetic field dependence of Ic.

Magnetic field dependence of the critical current anisotropy in normal metal‐YBa2Cu3O7−δthin‐film bilayers

1991 ◽  
Vol 58 (11) ◽  
pp. 1205-1207 ◽  
Author(s):  
R. H. Ono ◽  
L. F. Goodrich ◽  
J. A. Beall ◽  
M. E. Johansson ◽  
C. D. Reintsema
Keyword(s):  
Magnetic Field ◽  
Critical Current ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
Normal Metal

The magnetic field dependence of the low temperature (0.1K to 3K) residual specific heat of Pr2−x Ce x CuO4−δ

1996 ◽  
Vol 46 (S3) ◽  
pp. 1213-1214 ◽  
Author(s):  
T. E. Hargreaves ◽  
J. Akimitsu ◽  
D. F. Brewer ◽  
N. E. Hussey ◽  
H. Noma ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Specific Heat ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
The Magnetic Field

About the Metal-Insulator Transition in Quasicrystals

2000 ◽  
Vol 643 ◽  
Author(s):  
J. Delahaye ◽  
C. Berger ◽  
T. Grenet ◽  
G. Fourcaudot
Keyword(s):  
Magnetic Field ◽  
Fermi Level ◽  
Electronic Properties ◽  
Field Dependence ◽  
Density Of States ◽  
Disordered Systems ◽  
Magnetic Field Dependence ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Mi Transition

AbstractElectronic properties (conductivity and density of states) of quasicrystals present strong similarities with disordered semiconductor based systems on both sides of the Mott-Anderson metal-insulator (MI) transition. We revisit the conductivity of the i-AlCuFe and i-AlPdMn phases, which has temperature and magnetic field dependence characteristic of the metallic side of the transition. The i-AlPdRe ribbon samples can be on either side of the transition depending on their conductivity value. In all these i-phases, the density of states at the Fermi level EF is low. Its energy dependence close to EF is similar to disordered systems close to the MI transition where it is ascribed to effects of interactions between electrons and disorder.

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